參數(shù)資料
型號(hào)： DL324
廠商： Spansion Inc.
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體
文件頁數(shù)： 5/58頁
文件大小： 875K
代理商： DL324
December4,2006 25686B10
Am29DL32xG
3
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations ........................................................................................10
Word/Byte Configuration ..........................................................10
Requirements for Reading Array Data .....................................10
Writing Commands/Command Sequences ..............................11
Accelerated Program Operation ...........................................11
Autoselect Functions .............................................................11
Simultaneous Read/Write Operations
with Zero Latency .....................................................................11
Standby Mode ..........................................................................11
Automatic Sleep Mode .............................................................11
RESET#: Hardware Reset Pin .................................................12
Output Disable Mode ...............................................................12
Table 2. Device Bank Divisions ..........................................................................................12
Table 3. Top Boot Sector Addresses ...............................................................................13
Table 4. Top Boot Secured Silicon Sector Addresses ....................................................14
Table 5. Bottom Boot Sector Addresses ...........................................................................15
Table 6. Bottom Boot Secured Silicon Sector Addresses .............................................16
Autoselect Mode ......................................................................17
Table 7. Autoselect Codes, (High Voltage Method) .......................................................17
Sector/Sector Block Protection and Unprotection ....................18
Table 8. Top Boot Sector/Sector Block Addresses forProtection/Unprotection .........18
Table 9. Bottom Boot Sector/Sector Block Addresses forProtection/Unprotection ...18
Write Protect (WP#) .................................................................19
Temporary Sector Unprotect ....................................................19
Figure 1. Temporary Sector Unprotect Operation........................................................... 19
Figure 2. In-System Sector Protection/
Sector Unprotection Algorithms.......................................................................................... 20
Secured Silicon Sector
Flash Memory Region ..............................................................21
Factory Locked: Secured Silicon Sector Programmed and Pro-
tected At the Factory .............................................................21
Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected At the Factory ...................................................21
Hardware Data Protection ........................................................21
Low VCC Write Inhibit ...........................................................22
Write Pulse “Glitch” Protection ..............................................22
Logical Inhibit ........................................................................22
Power-Up Write Inhibit ..........................................................22
Common Flash Memory Interface (CFI) . . . . . . . 22
Table 10. CFI Query Identification String.......................................................................... 22
Table 11. System Interface String...................................................................................... 23
Table 12. Device Geometry Definition............................................................................... 23
Table 13. Primary Vendor-Specific Extended Query...................................................... 24
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data ..................................................................24
Reset Command ......................................................................25
Autoselect Command Sequence ..............................................25
Enter Secured Silicon Sector/Exit Secured Silicon Sector Com-
mand Sequence .......................................................................25
Byte/Word Program Command Sequence ...............................25
Unlock Bypass Command Sequence ................................... 26
Figure 3. Program Operation.............................................................................................. 26
Chip Erase Command Sequence ............................................ 26
Sector Erase Command Sequence ......................................... 27
Erase Suspend/Erase Resume Commands ............................ 27
Figure 4. Erase Operation................................................................................................... 28
Table 14. Command Definitions......................................................................................... 29
Write Operation Status . . . . . . . . . . . . . . . . . . . . 30
DQ7: Data# Polling .................................................................. 30
Figure 5. Data# Polling Algorithm....................................................................................... 30
RY/BY#: Ready/Busy# ..............................................................31
DQ6: Toggle Bit I ..................................................................... 31
Figure 6. Toggle Bit Algorithm............................................................................................. 31
DQ2: Toggle Bit II .................................................................... 32
Reading Toggle Bits DQ6/DQ2 ................................................ 32
DQ5: Exceeded Timing Limits ................................................. 32
DQ3: Sector Erase Timer ........................................................ 32
Table 15. Write Operation Status .......................................................................................33
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 34
Figure 7. Maximum Negative OvershootWaveform....................................................... 34
Figure 8. Maximum Positive OvershootWaveform......................................................... 34
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 9. I
Current vs. Time (Showing Active and AutomaticSleepCurrents)...... 36
Figure 10. Typical I
vs. Frequency................................................................................ 36
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 11. Test Setup.......................................................................................................... 37
Figure 12. Input Waveforms and Measurement Levels.................................................. 37
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 13. Read Operation Timings................................................................................... 38
Figure 14. Reset Timings..................................................................................................... 39
Word/Byte Configuration (BYTE#) ........................................... 40
Figure 15. BYTE# Timings for Read Operations............................................................. 40
Figure 16. BYTE# Timings for Write Operations.............................................................. 40
Erase and Program Operations ............................................... 41
Figure 17. Program Operation Timings............................................................................. 42
Figure 18. Accelerated Program Timing Diagram........................................................... 42
Figure 19. Chip/Sector Erase Operation Timings............................................................ 43
Figure 20. Back-to-back Read/Write Cycle Timings........................................................ 44
Figure 21. Data# Polling Timings (During EmbeddedAlgorithms)............................... 44
Figure 22. Toggle Bit Timings (During EmbeddedAlgorithms)..................................... 45
Figure 23. DQ2 vs. DQ6...................................................................................................... 45
Temporary Sector Unprotect ................................................... 46
Figure 24. Temporary Sector Unprotect Timing Diagram.............................................. 46
Figure 25. Sector/Sector Block Protect and Unprotect TimingDiagram...................... 47
Alternate CE# Controlled Erase and Program Operations ...... 48
Figure 26. Alternate CE# Controlled Write (Erase/Program) OperationTimings........ 49
Erase And Programming Performance . . . . . . . 50
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 50
TSOP Pin and Fine-Pitch BGA Capacitance. . . . 50
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 51
FBD063—63-ball Fine-Pitch Ball Grid Array (FBGA)
8 x 14 mm ................................................................................ 51
FBD048—Fine-Pitch Ball Grid Array, 6 x 12 mm ..................... 52
TS 048—Thin Small Outline Package ..................................... 53
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 55
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