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參數(shù)資料
| 型號： | DM-231 |
| 廠商： | Sony Corporation |
| 英文描述： | Magnetoresistance Element |
| 中文描述： | 磁阻元件 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 96K |
| 代理商： | DM-231 |
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E88Z12C5X-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Description
DM-231 a magnetic sensor using magnetoresist-
ance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
Features
Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at V
CC
=5 V, H=14400 A/m
Fitted with bias magnet: stable output.
High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
Non-contact angle of rotation detection.
Contactless potentiometer.
Absolute Maximum Ratings
(Ta=25 °C)
Supply voltage
Storage temperature
V
CC
Tstg
10
V
–30 to +100
°C
Recommended Operating Conditions
Supply voltage
Operating temperature
V
CC
Topr
5
V
–20 to + 75
°C
Magnetoresistance Element
For the availability of this product, please contact the sales office.
M-118 (Plastic)
DM-231
Electrical Characteristics
Ta=25 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Output voltage
Midpoint potential
Midpoint potential
difference/Output voltage
Total resistance
V
O
V
A
, V
B
|V
A
-V
B
|
V
O
R
T
V
CC
=5 V , H=14400 A/m (Peak)
AC magnetic field
θ
=0 °
V
CC
=5 V , H=0 A/m
V
CC
=5 V , H=0 A/m
H=14400 A/m (Peak)
AC magnetic field
θ
=0 °
150
2.475
500
650
2.525
15
800
mVp-p
V
%
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DM-232 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:Magnetoresistance Element |
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