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參數(shù)資料
| 型號： | DM1M32SJ-10 |
| 英文描述： | Enhanced DRAM (EDRAM) Module |
| 中文描述： | 增強的DRAM（eDRAM內(nèi)存）模塊 |
| 文件頁數(shù)： | 21/21頁 |
| 文件大?。?/td> | 124K |
| 代理商： | DM1M32SJ-10 |
2-55
DM2203T - 12 I
Dynamic Memory
Capacity in Bits
i.e., Power to Which 2 is Raised for Total Capacity
Special Features Field
0 = No Write Per Bit
1= Write Per Bit
I/OWidth
i.e., Power to Which 2 is Raised for I/O Width (x8)
Packaging System
T = 300 Mil, Plastic TSOP - II
Access Time from Cache in Nanoseconds
12ns
15ns
Temperature Range
No Designator = 0 to 70°C (Commercial)
I = -40 to 85°C (Industrial)
Part Numbering System
0.0315 (0.80) TYP.
Inches (mm)
0.741 (18.81) MAX.
0.044 (1.13) MAX.
7° TYP.
0.040 (1.02) TYP.
0.040 (1.02) TYP.
0.040 (1.02) TYP.
0.004 (0.10)
0.000 (0.00)
0.010 (0.24)
0.004 (0.09)
0.308 (7.82)
0.292 (7.42)
0.039 (1.00)
0.023 (0.60)
0.016 (0.40)
0.008 (0.20)
0.024 (0.60)
0.016 (0.40)
0.039 (1.00) TYP.
0.371 (9.42)
0.355 (9.02)
Mechanical Data
44 Pin 300 Mil Plastic TSOP Package
The information contained herein is subject to change wthout notice. Enhanced Memory Systems Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in
an Enhanced product, nor does it convey or imply any license under patent or other rights.
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