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參數(shù)資料
| 型號(hào)： | DN2530 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓300V,N溝道耗盡型垂直DMOS場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道耗盡型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓300V，?溝道耗盡型垂直的DMOS場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 32K |
| 代理商： | DN2530 |
8-2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Source
Breakdown Voltage
300
V
V
GS
= -5V, I
D
= 100
μ
A
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
Gate-to-Source OFF Voltage
–1.0
–3.5
V
V
DS
= 25V, I
D
= 10
μ
A
V
DS
= 25V, I
D
= 10
μ
A
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -10V, V
DS
= Max Rating
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 150mA
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
4.5
mV/
°
C
100
nA
Drain-to-Source Leakage Current
10
μ
A
1
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
200
mA
Static Drain-to-Source
ON-State Resistance
12
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
V
GS
= 0V, I
D
= 150mA
I
D
= 150mA, V
DS
= 10V
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
300
m
Input Capacitance
300
Common Source Output Capacitance
30
pF
Reverse Transfer Capacitance
5
Turn-ON Delay Time
10
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25
Rise Time
15
ns
Turn-OFF Delay Time
15
Fall Time
20
Diode Forward Voltage Drop
1.8
V
V
GS
= -10V, I
SD
= 150mA
V
GS
= -10V, I
SD
= 1A
Reverse Recovery Time
600
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.74W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
175mA
500mA
175mA
500mA
TO-243AA
200mA
500mA
1.6
15
78
200mA
500mA
*
I
(continuous) is limited by max rated T
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
DN2530
Thermal Characteristics
Switching Waveforms and Test Circuit
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