參數(shù)資料
型號: DN2535N5
廠商: SUPERTEX INC
元件分類: JFETs
英文描述: N-Channel Depletion-Mode Vertical DMOS FETs
中文描述: 0.5 A, 350 V, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, N5, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 90K
代理商: DN2535N5
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN2535
DN2540
Advanced DMOS Technology
Not recommended for new designs. For products in TO-92
(N3) package and TO-243AA (N8) package, please use DN3535
or DN3545 instead.
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
±
20V
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Note
: See Package Outline section for dimensions.
Package Options
N-Channel Depletion-Mode
Vertical DMOS FETs
TO-92
S G D
TO-243AA
(SOT-89)
G
D
S
D
TO-220
TAB: DRAIN
G
S
Product marking for TO-243AA:
DN5D
Where
= 2-week alpha date code
*
Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
BV
DSX
/
BV
DGX
R
DS(ON)
(max)
I
DSS
(min)
TO-92
TO-220
TO-243AA*
350V
25
150mA
DN2535N3
DN2535N5
400V
25
150mA
DN2540N3
DN2540N5
DN2540N8
Ordering Information
Order Number / Package
相關(guān)PDF資料
PDF描述
DN2540 N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N8 N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3 N-Channel Depletion-Mode Vertical DMOS FETs
DN2540 N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓400V,N溝道耗盡型垂直DMOS場效應(yīng)管)
DN2535 N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓350V,N溝道耗盡型垂直DMOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
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