參數(shù)資料
型號： DN2540
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓400V,N溝道耗盡型垂直DMOS場效應(yīng)管)
中文描述： N溝道耗盡型場效應(yīng)管垂直的DMOS（擊穿電壓為400V，?溝道耗盡型垂直的DMOS場效應(yīng)管）
文件頁數(shù)： 2/4頁
文件大?。?/td> 28K
代理商： DN2540
8-6
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
120mA
500mA
120mA
500mA
TO-220
500mA
500mA
15.0W
8.3
70
500mA
500mA
TO-243AA
170mA
500mA
1.6W (T
A
= 25
°
)
15
78
170mA
500mA
*
I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate. T
A
= 25
°
C
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
DN2540
400
V
V
GS
= -5V, I
D
= 100
μ
A
DN2535
350
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
Gate-to-Source OFF Voltage
–1.5
–3.5
V
V
DS
= 25V, I
D
= 10
μ
A
V
DS
= 25V, I
D
= 10
μ
A
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -10V, V
DS
= Max Rating
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 120mA
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
4.5
mV/
°
C
100
nA
Drain-to-Source Leakage Current
10
μ
A
1
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
150
mA
Static Drain-to-Source
ON-State Resistance
17
25
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
V
GS
= 0V, I
D
= 120mA
I
D
= 100mA, V
DS
= 10V
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
325
m
Input Capacitance
200
300
Common Source Output Capacitance
12
30
pF
Reverse Transfer Capacitance
1
5
Turn-ON Delay Time
10
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25
Rise Time
15
ns
Turn-OFF Delay Time
15
Fall Time
20
Diode Forward Voltage Drop
1.8
V
V
GS
= -10V, I
SD
= 120mA
V
GS
= -10V, I
SD
= 1A
Reverse Recovery Time
800
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Thermal Characteristics
Switching Waveforms and Test Circuit
DN2535/DN2540
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DN2540_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3 功能描述:MOSFET 400V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DN2540N3/N5/N8-G 制造商:未知廠家 制造商全稱:未知廠家 功能描述:高速高壓MOSFET,用于開關(guān)信號上,低閥門電壓,0.8V工作. TN系列,VN系列,TP系列,VP系列.TN2540,TN2425,TN0620,TN2640 ,TP2540,TP2522,TP0620,VP0550 高速高壓耗盡型MOSFET, DN2540,DN2535,DN2530, LND150,LND250 高壓驅(qū)動接口IC,N溝道SINK輸出,HV5522(32通道,CCW模式),HV5222(32通道),HV5122(32通道),HV5622(32通道),HV5630(32通道),HV5530 (32通道), 我司專業(yè)代理美國Supertex產(chǎn)品:白光LED照明驅(qū)動IC. LED交通燈, 背光源驅(qū)IC.超聲波醫(yī)療設(shè)備. 議器議表專用IC 及MOSFET管等及CREE(美國獨家專利碳化硅芯片) 高壓肖特基(600V/1200V以上)產(chǎn)品和阿諾(ARNOLD) 鐵硅鋁磁粉環(huán)(芯)，如果沒有特殊說明supertexc產(chǎn)品均為今年以上環(huán)保產(chǎn)品．隨時可以提供樣品．歡迎來電咨詢！　謝！ www.jarwey.com 13316866350王先生
DN2540N3-G 功能描述:MOSFET 400V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DN2540N3-G P002 制造商:Supertex Inc 功能描述:N-Channel MOSFET 400V 0.12A 3P TO-92
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