參數(shù)資料
型號: DN2624
廠商: Supertex, Inc.
英文描述: N-Channel Depletion-Mode Vertical DMOS FETs
中文描述: N溝道耗盡型場效應(yīng)管垂直的DMOS
文件頁數(shù): 2/4頁
文件大?。?/td> 65K
代理商: DN2624
8-10
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
300mA
1.0A
125
170
300mA
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
DN2624
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Source
Breakdown Voltage
240
V
V
GS
= -5V, I
D
= 100
μ
A
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
Gate-to-Source OFF Voltage
–1
–3
V
V
DS
= 25V, I
D
= 10
μ
A
V
DS
= 25V, I
D
= 10
μ
A
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -10V, V
DS
= Max Rating
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 200mA
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
4.5
mV
100
nA
Drain-to-Source Leakage Current
10
μ
A
1
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
600
mA
Static Drain-to-Source
ON-State Resistance
4.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
V
GS
= 0V, I
D
= 200mA
I
D
= 300mA, V
DS
= 10V
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
400
mhos
Input Capacitance
720
Common Source Output Capacitance
100
pF
Reverse Transfer Capacitance
30
Turn-ON Delay Time
15
30
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 10
Rise Time
22
44
ns
Turn-OFF Delay Time
22
44
Fall Time
30
60
Diode Forward Voltage Drop
1.8
V
V
GS
= -10V, I
SD
= 200mA
V
GS
= -10V, I
SD
= 1A
Reverse Recovery Time
600
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Switching Waveforms and Test Circuit
– OBSOLETE –
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