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參數(shù)資料
| 型號(hào)： | DN3125 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓250V,N溝道耗盡型垂直DMOS場效應(yīng)管) |
| 中文描述： | N溝道耗盡型場效應(yīng)管垂直的DMOS（擊穿電壓250V，?溝道耗盡型垂直的DMOS場效應(yīng)管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 16K |
| 代理商： | DN3125 |
1
DN3125
03/03/99
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.
DN3125
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
*
Die in wafer form.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
N-Channel Depletion-Mode
Vertical DMOS FETs
BV
DSX
/
BV
DGX
250V
R
DS(ON)
(max)
I
DSS
(min)
Die*
20
200mA
DN3125NW
Ordering Information
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
BV
DGX
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
New Product
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DN3135K1-G | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3135N8-G | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3135 | N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓350V,N溝道耗盡型垂直DMOS場效應(yīng)管) |
| DN3145N8-G | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3145 | N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓450V,N溝道耗盡型垂直DMOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DN3125NW | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3135 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3135_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
| DN3135K1 | 功能描述:MOSFET 350V 35Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DN3135K1-G | 功能描述:MOSFET 350V 35Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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