參數(shù)資料
型號： DN3135N8-G
廠商： SUPERTEX INC
元件分類： 小信號晶體管
英文描述： N-Channel Depletion-Mode Vertical DMOS FETs
中文描述： 135 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
封裝： GREEN PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 462K
代理商： DN3135N8-G
2
DN3135
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
GEN
0V
-10V
Electrical Characteristics
Symbol
Parameter
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
Min
350
-1.5
-
-
-
Typ
-
-
-
-
-
Max
-
-3.5
4.5
100
1.0
Units
V
V
mV/
O
C
nA
μA
Conditions
V
GS
= -5.0V, I
D
= 100μA
V
DS
= 15V, I
D
= 10μA
V
DS
= 15V, I
D
= 10μA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= -5.0V
V
DS
= 0.8 Max Rating,
V
GS
= -5.0V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 15V
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
I
D(OFF)
Drain-to-source leakage current
-
-
1.0
mA
I
DSS
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
180
-
-
mA
R
DS(ON)
-
-
35
Ω
V
GS
= 0V, I
D
= 150mA
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
-
-
-
1.1
-
120
15
10
10
15
15
20
1.8
-
%/
O
C
mmho
V
GS
= 0V, I
D
= 150mA
V
DS
= 10V, I
D
= 100mA
V
GS
= -5.0V,
V
= 25V,
f = 1MHz
140
-
-
-
-
-
-
-
-
-
60
6.0
1.0
-
-
-
-
-
800
pF
ns
V
DD
= 25V,
I
D
R
GEN
= 25,
V
GS
= 0v to -10V
V
ns
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
Thermal Characteristics
Package
I
(continuous)
1
720mA
135mA
I
(pulsed)
300mA
300mA
Power Dissipation
@T
A
= 25
O
C
0.36W
1.3W
2
Θ
jc
(
O
C/W)
Θ
ja
(
O
C/W)
I
DR
1
I
DRM
TO-236AB
TO-243AA
Notes:
1. I
(continuous) is limited by max rated T
.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
200
34
350
97
2
72mA
135mA
300mA
300mA
Switching Waveforms and Test Circuit
相關(guān)PDF資料
PDF描述
DN3135 N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓350V,N溝道耗盡型垂直DMOS場效應管)
DN3145N8-G N-Channel Depletion-Mode Vertical DMOS FETs
DN3145 N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓450V,N溝道耗盡型垂直DMOS場效應管)
DN3525N8-G N-Channel Depletion-Mode Vertical DMOS FETs
DN3525 N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓350V,N溝道耗盡型垂直DMOS場效應管)
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參數(shù)描述
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DN3145N8 功能描述:MOSFET 450V 60Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DN3145N8-G 功能描述:MOSFET 450V 60Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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