參數(shù)資料
型號(hào)： DN3145
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓450V,N溝道耗盡型垂直DMOS場(chǎng)效應(yīng)管)
中文描述： N溝道耗盡型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓450V，?溝道耗盡型垂直的DMOS場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 17K
代理商： DN3145
2
DN3145
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
06/23/99
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.3W
θ
jc
°
C/W
34
θ
ja
°
C/W
97
I
DR
*
I
DRM
TO-243AA
100mA
300mA
100mA
300mA
*
I
(continuous) is limited by max rated T
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Source
Breakdown Voltage
450
V
V
GS
= -5V, I
D
= 100
μ
A
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
Gate-to-Source OFF Voltage
–1.5
–3.5
V
V
DS
= 15V, I
D
= 10
μ
A
V
DS
= 15V, I
D
= 10
μ
A
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 100mA
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
4.5
mV/
°
C
100
nA
Drain-to-Source Leakage Current
1.0
μ
A
1.0
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
120
mA
Static Drain-to-Source
ON-State Resistance
60
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
V
GS
= 0V, I
D
= 100mA
I
D
= 100mA, V
DS
= 10V
V
GS
= -5.0V, V
DS
= 25V
f = 1.0 MHz
140
m
Input Capacitance
120
Common Source Output Capacitance
15
pF
Reverse Transfer Capacitance
10
Turn-ON Delay Time
10
V
DD
= 25V,
I
D
= 100mA,
R
GEN
= 25
Rise Time
15
ns
Turn-OFF Delay Time
20
Fall Time
35
Diode Forward Voltage Drop
1.8
V
V
GS
= -5.0V, I
SD
= 100mA
V
GS
= -5.0V, I
SD
= 100mA
Reverse Recovery Time
800
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
相關(guān)PDF資料
PDF描述
DN3525N8-G N-Channel Depletion-Mode Vertical DMOS FETs
DN3525 N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓350V,N溝道耗盡型垂直DMOS場(chǎng)效應(yīng)管)
DN3535N8-G N-Channel Depletion-Mode Vertical DMOS FETs
DN3535 N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓250V,N溝道耗盡型垂直DMOS場(chǎng)效應(yīng)管)
DN3535 N-Channel Depletion-Mode Vertical DMOS FETs
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