參數(shù)資料
型號： DN3525
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓350V,N溝道耗盡型垂直DMOS場效應管)
中文描述： N溝道耗盡型場效應管垂直的DMOS（擊穿電壓350V，?溝道耗盡型垂直的DMOS場效應管）
文件頁數(shù)： 2/2頁
文件大?。?/td> 18K
代理商： DN3525
2
DN3525
90%
10%
90%
90%
10%
10%
GEPULSE
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100
FAX: (408) 222-4895
www.supertex.com
06/10/99
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.6W
θ
jc
°
C/W
θ
ja
°
C/W
78
I
DR
*
I
DRM
TO-243AA
360mA
600mA
15
360mA
600mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
Parameter
BV
DSX
Drain-to-Souce Breakdown Voltage
V
GS(OFF)
Gate-to-Source OFF Voltage
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
I
GSS
Gate Body Leakage Current
I
D(OFF)
Drain-to-Source Leakage Current
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Min
250
Typ
Max
Unit
V
Conditions
V
GS
= -5.0V, I
D
= 100
μ
A
V
DS
= 15V, I
D
= 1.0mA
V
DS
= 15V, I
D
= 1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -5.0V, V
DS
= 4.5V
V
GS
= -5.0V, V
DS
= 100V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 200mA
V
GS
= -0.8V, I
D
= 50mA
V
GS
= 0V, I
D
= 200mA
I
D
= 150mA, V
DS
=10V
-1.8
-3.5
V
4.5
mV/
°
C
100
nA
20
nA
200
1.0
μ
A
1.0
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
300
mA
Static Drain-to-Source
ON-State Resistance
6.0
6.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
225
m
g
Input Capacitance
270
350
Common Source Output Capacitance
20
60
pF
V
GS
= -5.0V, V
DS
= 25V, f =1.0Mhz
Reverse Transfer Capacitance
5.0
20
Turn-ON Delay Time
20
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25
,
V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
Rise Time
25
Turn-OFF Delay Time
25
Fall Time
40
Diode Forward Voltage Drop
1.8
V
Reverse Recovery Time
800
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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