參數(shù)資料
型號(hào): DN3525N8-G
廠商: SUPERTEX INC
元件分類: JFETs
英文描述: N-Channel Depletion-Mode Vertical DMOS FETs
中文描述: 0.36 A, 250 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
封裝: GREEN PACKAGE-3
文件頁數(shù): 4/5頁
文件大?。?/td> 471K
代理商: DN3525N8-G
4
DN3525
Typical Performance Curves
(cont.)
BV
DSV
Variation with Temperature
0
1000
2000
3000
4000
5000
-5
-4
-3
-2
-1
0
1
2
3
0
10
20
30
40
0
50
100
150
200
250
300
350
-3
-2
-1
0
1
2
0
400
800
1200
1600
2000
R
D
I
D
(Amperes)
On Resistance vs. Drain Current
V
GS(OFF)
and R
DS(ON)
w/ Temperature
V
G
T
J
(
O
C)
R
D
Transfer Characteristics
I
D
V
GS
(Volts)
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
I
D
= 100A
V
GS
= -5V
V
DS
= 10V
T
A
= -55
O
C
T
A
= 25
O
C
T
A
= 125
O
C
V
GS
= -5V
C
ISS
C
OSS
C
RSS
I
D
= 200mA
V
DS
=30V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
V
GS
= 0V
T
J
= 25
O
C
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
V
GS(OFF)
@ 1mA, 15V
R
DS(on)
@ 0V, 200mA
B
D
T
J
(
O
C)
Capacitance vs. Drain Source Voltage
C
V
DS
(volts)
Gate Drive Dynamic Characteristics
Q (picocoulombs)
V
G
(
相關(guān)PDF資料
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DN3535N8 功能描述:MOSFET 350V 10Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DN3535N8-G 功能描述:MOSFET 350V 10Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube