參數(shù)資料
型號： DN3535
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓250V,N溝道耗盡型垂直DMOS場效應(yīng)管)
中文描述： N溝道耗盡型場效應(yīng)管垂直的DMOS（擊穿電壓250V，?溝道耗盡型垂直的DMOS場效應(yīng)管）
文件頁數(shù)： 2/4頁
文件大小： 27K
代理商： DN3535
2
DN3535
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-243AA
230mA
500mA
1.6W
15
78
230mA
500mA
*
I
(continuous) is limited by max rated T
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Symbol
BV
DSX
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
Parameter
Min
350
Typ
Max
Unit
V
Conditions
Drain-to-Souce Breakdown Voltage
V
GS
= -5.0V, I
D
= 1.0
μ
A
V
DS
= 15V, I
D
= 10
μ
A
V
DS
= 15V, I
D
= 10
μ
A
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -5.0V, V
DS
= 4.5V
V
GS
= -5.0V, V
DS
= 100V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 150mA
V
GS
= -0.8V, I
D
= 50mA
V
GS
= 0V, I
D
= 150mA
I
D
= 100mA, V
DS
=10V
Gate-to-Source OFF Voltage
-1.5
-3.5
V
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
4.5
mV/
°
C
nA
100
Drain-to-Source Leakage Current
20
200
1.0
1.0
nA
μ
A
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
200
mA
Static Drain-to-Source
ON-State Resistance
10
10
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
m
g
200
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
360
40
10
pF
V
GS
= -5.0V, V
DS
= 25V, f =1.0Mhz
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
15
20
20
30
1.8
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25
,
V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
V
ns
800
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DN3535_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs
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DN3535NW 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs
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