參數(shù)資料
型號(hào)： DN3535N8
廠商： SUPERTEX INC
元件分類： JFETs
英文描述： N-Channel Depletion-Mode Vertical DMOS FETs
中文描述： 0.23 A, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
封裝： SAME AS SOT-89, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 89K
代理商： DN3535N8
2
DN3535
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-243AA
230mA
500mA
1.6W
15
78
230mA
500mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Notes:
1.
2.
All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
All A.C. parameters sample tested.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
Drain-to-Souce Breakdown Voltage
350
V
V
GS
= -5.0V, I
D
= 1.0
μ
A
V
DS
= 15V, I
D
= 10
μ
A
V
DS
= 15V, I
D
= 10
μ
A
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 150mA
Gate-to-Source OFF Voltage
-1.5
-3.5
V
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
4.5
mV/
°
C
100
nA
Drain-to-Source Leakage Current
1.0
μ
A
1.0
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
200
mA
Static Drain-to-Source
ON-State Resistance
10
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
V
GS
= 0V, I
D
= 150mA
I
D
= 100mA, V
DS
=10V
200
m
g
Input Capacitance
360
Common Source Output Capacitance
40
pF
V
GS
= -5.0V, V
DS
= 25V, f =1.0Mhz
Reverse Transfer Capacitance
10
Turn-ON Delay Time
15
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25
,
V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
Rise Time
20
Turn-OFF Delay Time
20
Fall Time
30
Diode Forward Voltage Drop
1.8
V
Reverse Recovery Time
800
ns
相關(guān)PDF資料
PDF描述
DN3535NW N-Channel Depletion-Mode Vertical DMOS FETs
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DN3545N8-G N-Channel Depletion-Mode Vertical DMOS FET
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DN3545 N-Channel Depletion-Mode Vertical DMOS FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DN3535N8-G 功能描述:MOSFET 350V 10Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DN3535NW 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs
DN3545 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs
DN3545_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FET
DN3545N3 功能描述:MOSFET 450V 20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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