參數(shù)資料
型號: DN3545N3-G
廠商: SUPERTEX INC
元件分類: 小信號晶體管
英文描述: N-Channel Depletion-Mode Vertical DMOS FET
中文描述: 136 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: GREEN, N3, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 494K
代理商: DN3545N3-G
2
DN3545
Notes:
1. I
(continuous) is limited by max rated T
.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@25
O
C unless otherwise specified)
Symbol
Parameter
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Thermal Characteristics
Package
I
(continuous)
1
136mA
200mA
I
(pulsed)
550mA
550mA
Power Dissipation
@T
A
= 25
O
C
0.74W
1.6W
2
θ
O
C/W
125
15
θ
O
C/W
170
78
2
I
DR
1
I
DRM
T0-92
TO-243AA
136mA
200mA
550mA
550mA
Min
450
-1.5
-
-
-
Typ
-
-
-
-
-
Max
-
-3.5
4.5
100
1.0
Units
V
V
mV/
O
C
nA
μA
Conditions
V
GS
= -5V, I
D
= 100μA
V
DS
= 25V, I
D
= 10μA
V
DS
= 25V, I
D
= 10μA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= -5V, V
DS
= Max Rating
V
GS
= -5V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 0V, V
DS
= 15V
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
I
D(OFF)
Drain-to-source leakage current
-
-
1.0
mA
I
DSS
Saturated drain-to-source current
Static drain-to-source
on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
200
-
-
mA
R
DS(ON)
-
-
20
Ω
V
GS
= 0V, I
D
= 150mA
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
-
-
-
-
-
-
-
-
-
-
-
1.1
-
360
40
15
20
30
30
40
1.8
-
%/
O
C
m I
D
= 100mA, V
DS
= 10V
V
GS
= 0V, I
D
= 150mA
150
-
-
-
-
-
-
-
-
-
pF
V
GS
= -5V, V
DS
= 25V, f = 1MHz
ns
V
DD
= 25V, I
D
= 150mA,
R
GEN
= 25Ω,V
GS
= 0V to -10V
V
ns
V
GS
= -5V, I
SD
= 150mA
V
GS
= -5V, I
SD
= 150mA
800
Ω
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