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參數(shù)資料
| 型號： | DPS256X16CH3-35I |
| 英文描述： | x16 SRAM Module |
| 中文描述： | x16的SRAM模塊 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 839K |
| 代理商： | DPS256X16CH3-35I |
Dense-Pac Microsystems, Inc.
DPS256X16Cn3/DPS256X16Bn3
RECOMMENDED OPERATING RANGE 3
Symbol
Characteristic
Min. Typ.
Max.
Unit
VDD
Supply Voltage
4.5
5.0
5.5
V
VIH
Input HIGH Voltage 2.2
VDD+0.3 V
VIL
Input LOW Voltage -0.52
0.8
V
TA
Operating
Temperature
M/B -55 +25
+125
oC
I
-40 +25
+85
C
0
+25
+70
TRUTH TABLE
Mode
SEL
CE
WE
OE I/O Pin Supply
Current
Not Selected
L
X
High-Z Standby
Not Selected
X
H
X
High-Z Standby
DOUT Disable
H
L
H
High-Z Active
Read
H
L
H
L
DOUT
Active
Write
H
L
X
DIN
Active
H = HIGH
L = LOW
X = Don’t Care
NOTE: SEL applies to DPS256X16Cn3 version only.
DC OUTPUT CHARACTERISTICS
Symbol
Parameter
Conditions
Min. Max. Unit
VOH
HIGH Voltage
IOH= -4.0mA 2.4
V
VOL
LOW Voltage
IOL=8.0mA
0.4
V
ABSOLUTE MAXIMUM RATINGS 3
Symbol
Parameter
Value
Unit
TSTC
Storage Temperature
-65 to +150
°C
TBIAS
Temperature Under Bias
-55 to +125
°C
VDD
Supply Voltage 1
-0.5 to +7.0
°C
VI/O
Input/Output Voltage 1
-0.5 to VDD+0.5
V
DC OPERATING CHARACTERISTICS:
Over operating ranges
Symbol
Characteristics
Test Conditions
Typ.
()
C
I
M/B
Unit
Min.
Max.
Min.
Max.
Min.
Max.
IIN
Input
Leakage Current
VIN = 0V to VDD
-
-20
+20
-20
+20
-20
+20
A
IOUT
Output
Leakage Current
VI/O = 0V to VDD,
CE or OE = VIH, or WE = VIL
-
-20
+20
-20
+20
-20
+20
A
ICC
Operating
Supply Current
Cycle=min., Duty=100%
IOUT = 0mA
X8
175
230
245
265
mA
X16
250
340
350
390
ISB1
Full Standby
Supply Current
VIN ≥ VDD -0.2V or
VIN
≤ VSS +0.2V
1.6
20
40
mA
ISB2
Standby Current (TTL)
CE = VIH
100
120
140
mA
IDR3
Data Retention
Supply Current
(3.0V)
VDR = 3.0V, CE ≥ VDR -0.2V,
(or SEL
≤ 0.2V, VIN ≥ VDD -0.2V
or VIN
≤ +0.2V)
0.28
1.6
2.4
8.0
mA
IDR2
Data Retention
Supply Current
(2.0V)
VDR = 2.0V, CE
≥ VDR -0.2V,
(or SEL
≤ 0.2V, VIN ≥ VDD -0.2V
or VIN
≤ +0.2V)
0.14
1.0
1.6
7.2
mA
VOL
Output Low Voltage
IOUT = 8.0mA
-
0.4
V
VOH
Output High Voltage
IOUT = -4.0mA
-
2.4
V
Typical measurements made at +25oC, Cycle = min., VDD = 5.0V.
NOTE: Test Conditions in parenthesis apply to DPS256X16Cn3 version only.
CAPACITANCE 4:
TA = 25°C, F = 1.0MHz
Symbol
Parameter
Max.
Unit
Condition
CADR Address Input
40
pF
VIN2 = 0V
CCE
Chip Enable
15
CSEL
Active High
Chip Select
25
CWE
Write Enable
40
COE
Output Enable
40
CI/O
Data Input/Output
25
NOTE: CSEL applies to DPS256X16Cn3 version only.
30A097-34
REV. G
3
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相關(guān)代理商/技術(shù)參數(shù) |
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| DPS256X16CH3-35M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
| DPS256X16CH3-45B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
| DPS256X16CH3-45C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
| DPS256X16CH3-45I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
| DPS256X16CH3-45M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
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