參數(shù)資料
型號(hào)： DS1-12D
廠商： IXYS CORP
元件分類(lèi)： 參考電壓二極管
英文描述： Rectifier Diode Avalanche Diode
中文描述： 2.3 A, 1200 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 34K
代理商： DS1-12D
2000 IXYS All rights reserved
1 - 1
V
RSM
V
1300
1700
1900
V
(BR)min
x
V
RRM
V
1300
1750
1950
Standard
Type
DS
1-12D
Avalanche
Types
DSA
1-12D
DSA
1-16D
DSA
1-18D
V
1200
1600
1800
x
Only for Avalanche Diodes
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
F(AV)M
T
VJ
T
amb
= 45 C; R
thJA
= 38 K/W; 180 sine
T
amb
= 45 C; R
thJA
= 80 K/W; 180 sine
DSA types, T
VJ
= T
VJM
, t
p
= 10 μs
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
V
R
= 0
t = 8.3 ms (60 Hz), sine
= T
7
A
A
A
2.3
1.3
P
RSM
I
FSM
1.6
kW
110
118
100
104
A
A
A
A
I
2
t
60
58
50
45
A
2
s
A
2
s
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
Weight
-40...+150
C
C
C
150
-40...+150
0.8
g
V
RRM
= 1200-1800 V
I
F(RMS)
= 7 A
I
F(AV)M
= 2.3 A
Features
G
Plastic standard package
G
Planar glassivated chips
Applications
G
Low power rectifiers
G
Field supply for DC motors
G
Power supplies
G
High voltage rectifiers
Advantages
G
Space and weight savings
G
Simple PCB mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
Symbol
Test Conditions
Characteristic Values
I
R
V
F
V
T0
r
T
R
thJA
T
VJ
I
F
For power-loss calculations only
T
VJ
= T
VJM
Forced air cooling with 1.5 m/s, T
= 45 C
Soldered on to PC board, T
amb
= 45 C
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
= T
VJM
; V
R
= V
RRM
= 7 A; T
VJ
= 25 C
0.7
mA
1.3
V
0.8
67
V
m
38
80
K/W
K/W
d
S
d
A
a
8.5
6.7
100
mm
mm
m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS
DSA 1
1
Rectifier Diode
Avalanche Diode
A
C
A = Anode C = Cathode
A
C
相關(guān)PDF資料
PDF描述
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