- 您現在的位置：買賣IC網 > PDF目錄299009 > DS1230AB-70-IND NVRAM (Battery Based) PDF資料下載
參數資料
| 型號： | DS1230AB-70-IND |
| 英文描述： | NVRAM (Battery Based) |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 469K |
| 代理商： | DS1230AB-70-IND |
DS1230Y/AB
11 of 12
DS1230Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH
POWERCAP
INCHES
PKG
DIM
MIN
NOM
MAX
A
0.920
0.925
0.930
B
0.955
0.960
0.965
C
0.240
0.245
0.250
D
0.052
0.055
0.058
E
0.048
0.050
0.052
F
0.015
0.020
0.025
G
0.020
0.025
0.030
ASSEMBLY AND USE
Reflow soldering
Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented label-side up (live-bug).
Hand soldering and touch-up
Do not touch soldering iron to leads for more than 3 seconds. To solder, apply flux to the pad, heat the
lead frame pad and apply solder. To remove part, apply flux, heat pad until solder reflows, and use a
solder wick.
LPM replacement in a socket
To replace a Low Profile Module in a 68-pin PLCC socket, attach a DS9034PC PowerCap to a module
base then insert the complete module into the socket one row of leads at a time, pushing only on the
corners of the cap. Never apply force to the center of the device. To remove from a socket, use a PLCC
extraction tool and ensure that it does not hit or damage any of the module IC components. Do not use
any other tool for extraction.
相關PDF資料 |
PDF描述 |
|---|---|
| DS1230AB-85-IND | NVRAM (Battery Based) |
| DS1230ABL-100 | NVRAM (Battery Based) |
| DS1230ABL-100-IND | NVRAM (Battery Based) |
| DS1230ABL-120 | NVRAM (Battery Based) |
| DS1230ABL-120-IND | NVRAM (Battery Based) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS1230AB-70IND+ | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230AB-85 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230AB-85+ | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230AB-85IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230AB-85-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。