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參數(shù)資料
| 型號(hào)： | DS1230ABL-120-IND |
| 英文描述： | NVRAM (Battery Based) |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 469K |
| 代理商： | DS1230ABL-120-IND |
DS1230Y/AB
5 of 12
AC ELECTRICAL CHARACTERISTICS (cont'd)
DS1230AB-120
DS1230Y-120
DS1230AB-150
DS1230Y-150
DS1230AB-200
DS1230Y-200
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Read Cycle
Time
tRC
120
150
200
ns
Access Time
tACC
120
150
200
ns
OE
to Output
Valid
tOE
60
70
100
ns
CE
to Output
Valid
tCO
120
150
200
ns
OE
or CE to
Output Active
tCOE
5
ns
5
Output High Z
from
Deselection
tOD
35
ns
5
Output Hold
from Address
Change
tOH
5
ns
Write Cycle
Time
tWC
120
150
200
ns
Write Pulse
Width
tWP
90
100
ns
3
Address Setup
Time
tAW
0
ns
Write Recovery
Time
tWR1
tWR2
5
15
5
15
5
15
ns
12
13
Output High Z
from WE
tODW
35
ns
5
Output Active
from WE
tOEW
5
ns
5
Data Setup
Time
tDS
50
60
80
ns
4
Data Hold Time
tDH1
tDH2
0
10
0
10
0
10
ns
12
13
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1230ABL-150 | NVRAM (Battery Based) |
| DS1230ABL-150-IND | NVRAM (Battery Based) |
| DS1230ABL-200 | NVRAM (Battery Based) |
| DS1230ABL-200-IND | NVRAM (Battery Based) |
| DS1230ABL-70 | NVRAM (Battery Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1230ABL-150 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-150-IND | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-200 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-200-IND | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-70 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based) |
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