- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄9320 > DS1248W-120IND (Maxim Integrated Products)IC NVSRAM 1MBIT 120NS 32DIP PDF資料下載
參數(shù)資料
| 型號(hào)： | DS1248W-120IND |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC NVSRAM 1MBIT 120NS 32DIP |
| 標(biāo)準(zhǔn)包裝： | 11 |
| 類型： | Phantom 計(jì)時(shí)芯片 |
| 特點(diǎn)： | NVSRAM |
| 存儲(chǔ)容量： | 128KB |
| 時(shí)間格式： | HH:MM:SS:hh（12/24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 2.97 V ~ 3.63 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 32-DIP 模塊（0.600"，15.24mm） |
| 供應(yīng)商設(shè)備封裝： | 32-EDIP |
| 包裝： | 管件 |
DS1248/DS1248P 1024K NV SRAM with Phantom Clock
4 of 19
RAM READ MODE
The DS1248 executes a read cycle whenever WE (write enable) is inactive (high) and CE (chip enable) is
active (low). The unique address specified by the 17 address inputs (A0–A16) defines which of the 128k
bytes of data is to be accessed. Valid data will be available to the eight data-output drivers within tACC
(access time) after the last address input signal is stable, providing that CE and OE (output enable) access
times and states are also satisfied. If OE and CE access times are not satisfied, then data access must be
measured from the later occurring signal (CE or OE) and the limiting parameter is either tCO for CE or tOE
for OE, rather than address access.
RAM WRITE MODE
The DS1248 is in the write mode whenever the WE and CE signals are in the active (low) state after
address inputs are stable. The latter occurring falling edge of CE or WE will determine the start of the
write cycle. The write cycle is terminated by the earlier rising edge of CEor WE. All address inputs must
be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time
(tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during
write cycles to avoid bus contention. However, if the output bus has been enabled (CE and OE active)
then WE will disable the outputs in tODW from its falling edge.
DATA RETENTION MODE
The 5V device is fully accessible and data can be written or read only when VCC is greater than VPF.
However, when VCC is below the power-fail point, VPF (point at which write protection occurs), the
internal clock registers and SRAM are blocked from any access. When VCC falls below the battery switch
point, VSO (battery supply level), device power is switched from the VCC pin to the backup battery. RTC
operation and SRAM data are maintained from the battery until VCC is returned to nominal levels.
The 3.3V device is fully accessible and data can be written or read only when VCC is greater than VPF.
When VCC falls below VPF, access to the device is inhibited. If VPF is less than VBAT, the device power is
switched from VCC to the backup supply (VBAT) when VCC drops below VPF. If VPF is greater than VBAT,
the device power is switched from VCC to the backup supply (VBAT) when VCC drops below VBAT. RTC
operation and SRAM data are maintained from the battery until VCC is returned to nominal levels.
All control, data, and address signals must be powered down when VCC is powered-down.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1746W-120IND | IC RTC RAM Y2K 3.3V 120NS 32EDIP |
| VI-BN4-IU-F2 | CONVERTER MOD DC/DC 48V 200W |
| MCP4161-104E/P | IC POT DGTL SNGL 100K SPI 8DIP |
| VI-BNM-MY-F4 | CONVERTER MOD DC/DC 10V 50W |
| VE-2W0-MX-B1 | CONVERTER MOD DC/DC 5V 75W |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1248W-120IND+ | 功能描述:實(shí)時(shí)時(shí)鐘 1024k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1248WP-120 | 功能描述:IC NVSRAM 1MBIT 120NS 34PCM RoHS:否 類別:集成電路 (IC) >> 時(shí)鐘/計(jì)時(shí) - 實(shí)時(shí)時(shí)鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時(shí)鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲(chǔ)容量:- 時(shí)間格式:HH:MM:SS（12/24 小時(shí)） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| DS1248WP-120+ | 功能描述:實(shí)時(shí)時(shí)鐘 1024k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1248WP120IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:1024k NV SRAM with Phantom Clock |
| DS1248WP-120IND | 功能描述:IC NVSRAM 1MBIT 120NS 34PCM RoHS:否 類別:集成電路 (IC) >> 時(shí)鐘/計(jì)時(shí) - 實(shí)時(shí)時(shí)鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時(shí)鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲(chǔ)容量:- 時(shí)間格式:HH:MM:SS（12/24 小時(shí)） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。