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參數(shù)資料
| 型號： | DS1248YP-70+ |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 9/19頁 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 1MBIT 70NS 34PCM |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 40 |
| 類型： | Phantom 計時芯片 |
| 特點： | NVSRAM |
| 存儲容量： | 128KB |
| 時間格式： | HH:MM:SS:hh（12/24 小時） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 4.5 V ~ 5.5 V |
| 電壓 - 電源，電池： | 3V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 34-PowerCap? 模塊 |
| 供應商設(shè)備封裝： | 34-PowerCap 模塊 |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 1432 (CN2011-ZH PDF) |
DS1248/DS1248P 1024K NV SRAM with Phantom Clock
17 of 19
AC TEST CONDITIONS
Output Load: 50pF + 1TTL Gate
Input Pulse Levels: 0 to 3V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
NOTES:
1) WE is high for a read cycle.
2) OE = VIH or VIL. If CE = VIH during write cycle, the output buffers remain in a high impedance state.
3) tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going
low to the earlier of CE or WE going high.
4) tDH, tDS are measured from the earlier of CE or WE going high.
5) These parameters are sampled with a 50pF load and are not 100% tested.
6) If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle
1, the output buffers remain in a high-impedance state during this period.
7) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9) The expected tDR is defined as cumulative time in the absence of VCC with the clock oscillator
running.
10) tWR is a function of the latter occurring edge of WE or CE.
11) Voltages are referenced to ground.
12) RST (Pin 1) has an internal pullup resistor.
13) RTC modules can be successfully processed through conventional wave-soldering techniques as long
as temperature exposure to the lithium energy source contained within does not exceed +85°C. Post-
solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not
used. See the PowerCap package drawing for details regarding the PowerCap package.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| DS1248YP-70+ | 功能描述:實時時鐘 1024k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1248YP70IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:1024k NV SRAM with Phantom Clock |
| DS1249AB | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:2048k Nonvolatile SRAM |
| DS1249AB100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:2048k Nonvolatile SRAM |
| DS1249AB-100 | 功能描述:NVRAM 2048K NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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