參數(shù)資料
型號(hào): DS1250AB-70-IND
英文描述: NVRAM (Battery Based)
中文描述: NVRAM中(基于電池)
文件頁(yè)數(shù): 8/11頁(yè)
文件大小: 189K
代理商: DS1250AB-70-IND
DS1250Y/AB
8 of 11
DC TEST CONDITIONS
Outputs Open
Cycle = 200 ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1250 TTP - SSS - III
Operating Temperature Range
blank: 0 to 70
IND: -40 to +85 C
Access Speed
70:
100:
70 ns
100 ns
Package Type
blank: 32-pin 600 mil DIP
P:
34-pin PowerCap Module
Device Type
AB:
Y:
5%
10%
DS1250Y/AB NONVOLATILE SRAM, 32-PIN, 740 MIL-EXTENDED DIP
MODULE
PKG
32-PIN
DIM
MIN
MAX
A IN.
MM
1.680
42.67
1.700
43.18
B IN.
MM
0.720
18.29
0.740
18.80
C IN.
MM
0.355
9.02
0.375
9.52
D IN.
MM
0.080
2.03
0.110
2.79
E IN.
MM
0.015
0.38
0.025
0.63
F IN.
MM
0.120
3.05
0.160
4.06
G IN.
MM
0.090
2.29
0.110
2.79
H IN.
MM
0.590
14.99
0.630
16.00
J IN.
MM
0.008
0.20
0.012
0.30
K IN.
MM
0.015
0.38
0.021
0.53
相關(guān)PDF資料
PDF描述
DS1250ABL-100 NVRAM (Battery Based)
DS1250ABL-100-IND NVRAM (Battery Based)
DS1250ABL-70 NVRAM (Battery Based)
DS1250ABL-70-IND NVRAM (Battery Based)
DS1250ABP-100 NVRAM (Battery Based)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1250AB-70IND+ 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1250ABL-100 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based)
DS1250ABL-100-IND 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based)
DS1250ABL-70 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based)
DS1250ABL-70-IND 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based)