參數(shù)資料
型號(hào)： DS1312E+T&R
廠商： Maxim Integrated
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 0K
描述： IC CONTROLLER NV BW/RST 20-TSSOP
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 2,500
控制器類型： 非易失性 RAM
電源電壓： 4.75 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
封裝/外殼： 20-TSSOP（0.173"，4.40mm 寬）
供應(yīng)商設(shè)備封裝： 20-TSSOP
包裝： 帶卷 (TR)
1 of 12
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FEATURES
Converts CMOS SRAM into nonvolatile
memory
Unconditionally write-protects SRAM when
VCC is out of tolerance
Automatically switches to battery backup
supply when VCC power failure occurs
Monitors voltage of a lithium cell and
provides advanced warning of impending
battery failure
Signals low-battery condition on active low
Battery Warning output signal
Optional 5% or 10% power-fail detection
Space-saving 8-pin DIP and SOIC packages
Optional 16-pin SOIC and 20-pin TSSOP
versions reset processor when power failure
occurs and hold processor in reset during
system power-up
Industrial temperature range of -40°C to
+85°C
PIN ASSIGNMENT
PIN DESCRIPTION
VCCI
- +5V Power Supply Input
VCCO
- SRAM Power Supply Output
VBAT
- Backup Battery Input
CEI
- Chip Enable Input
CEO
- Chip Enable Output
TOL
- VCC Tolerance Select
BW
- Battery Warning Output
(Open Drain)
RST
- Reset Output (Open Drain)
GND
- Ground
NC
- No Connection
DESCRIPTION
The DS1312 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application
problem of converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-
of-tolerance condition. When such a condition is detected, chip enable is inhibited to accomplish write
protection and the battery is switched on to supply the RAM with uninterrupted power. Special circuitry
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery
consumption.
1
2
3
4
20
19
18
17
5
6
7
8
9
10
11
12
13
14
15
16
NC
VCCI
RST
NC
BW
NC
CEO
NC
CEI
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
DS1312E 20-Pin TSSOP
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1312S-2 8-Pin SOIC
(150 mils)
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1312 8-Pin DIP
(300 mils)
1
2
3
4
16
15
14
13
5
6
7
8
9
10
11
12
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
NC
VCCI
RST
NC
BW
CEO
NC
CEI
DS1312S 16-Pin SOIC
(300 mils)
DS1312
Nonvolatile Controller with Lithium Battery Monitor
19-6306; Rev 6/12
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DS1312S/T&R 功能描述:IC CONTROLLER NV BW/RST 16-SOIC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件
DS1312S+ 功能描述:IC CTRLR NV W/BATT MOD 16-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件
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