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參數(shù)資料
| 型號： | DS1312S+ |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC CTRLR NV W/BATT MOD 16-SOIC |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 45 |
| 控制器類型： | 非易失性 RAM |
| 電源電壓： | 4.75 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應商設備封裝： | 16-SOIC W |
| 包裝： | 管件 |
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FEATURES
Converts CMOS SRAM into nonvolatile
memory
Unconditionally write-protects SRAM when
VCC is out of tolerance
Automatically switches to battery backup
supply when VCC power failure occurs
Monitors voltage of a lithium cell and
provides advanced warning of impending
battery failure
Signals low-battery condition on active low
Battery Warning output signal
Optional 5% or 10% power-fail detection
Space-saving 8-pin DIP and SOIC packages
Optional 16-pin SOIC and 20-pin TSSOP
versions reset processor when power failure
occurs and hold processor in reset during
system power-up
Industrial temperature range of -40°C to
+85°C
PIN ASSIGNMENT
PIN DESCRIPTION
VCCI
- +5V Power Supply Input
VCCO
- SRAM Power Supply Output
VBAT
- Backup Battery Input
CEI
- Chip Enable Input
CEO
- Chip Enable Output
TOL
- VCC Tolerance Select
BW
- Battery Warning Output
(Open Drain)
RST
- Reset Output (Open Drain)
GND
- Ground
NC
- No Connection
DESCRIPTION
The DS1312 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application
problem of converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-
of-tolerance condition. When such a condition is detected, chip enable is inhibited to accomplish write
protection and the battery is switched on to supply the RAM with uninterrupted power. Special circuitry
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery
consumption.
1
2
3
4
20
19
18
17
5
6
7
8
9
10
11
12
13
14
15
16
NC
VCCI
RST
NC
BW
NC
CEO
NC
CEI
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
DS1312E 20-Pin TSSOP
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1312S-2 8-Pin SOIC
(150 mils)
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1312 8-Pin DIP
(300 mils)
1
2
3
4
16
15
14
13
5
6
7
8
9
10
11
12
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
NC
VCCI
RST
NC
BW
CEO
NC
CEI
DS1312S 16-Pin SOIC
(300 mils)
DS1312
Nonvolatile Controller with Lithium Battery Monitor
19-6306; Rev 6/12
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PDF描述 |
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| DS1218S+ | IC CONTROLLER NV 8-SOIC |
| DS1210+ | IC CONTROLLER CHIP NV 8-DIP |
| GBM15DTBN-S189 | CONN EDGECARD 30POS R/A .156 SLD |
| EMC40DRTS | CONN EDGECARD 80POS .100 EXTEND |
| DS1314S+ | IC CTRLR NV W/BATT MON 3V 16SOIC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1312S/T&R | 制造商:Maxim Integrated Products 功能描述:NV CONTROLLER BW & RST 16-SOIC T&R - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC CONTROLLER NV BW/RST 16-SOIC 制造商:Maxim Integrated Products 功能描述:Memory Controllers Controller w/Lithium Battery Monitor |
| DS1312S/T&R | 功能描述:IC CONTROLLER NV BW/RST 16-SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標準包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:16-SOIC W 包裝:管件 |
| DS1312S+ | 功能描述:IC CTRLR NV W/BATT MOD 16-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標準包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:16-SOIC W 包裝:管件 |
| DS1312S+T&R | 制造商:Maxim Integrated Products 功能描述:NONVOLATILE CNTRLR 16SOIC - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC CONTROLLER NV BW/RST 16-SOIC 制造商:Maxim Integrated Products 功能描述:Memory Controllers Controller w/Lithium Battery Monitor |
| DS1312S+T&R | 功能描述:IC CONTROLLER NV BW/RST 16-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標準包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:16-SOIC W 包裝:管件 |
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