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參數(shù)資料
| 型號(hào)： | DS1314+ |
| 廠商： | Maxim Integrated |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 0K |
| 描述： | IC CTRLR NV W/BATT MON 8-DIP |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 控制器類型： | 非易失性 RAM |
| 電源電壓： | 3 V ~ 3.6 V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 8-DIP（0.300"，7.62mm） |
| 供應(yīng)商設(shè)備封裝： | 8-PDIP |
| 包裝： | 管件 |
DS1314
10 of 12
NOTES:
2. All voltages referenced to ground.
3. Measured with outputs open circuited.
4. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥
VCCI -0.2V.
5. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥
VCCI -0.3V.
6. All inputs within 0.3V of ground or VCCI.
7. ICCO2 is the maximum average load current which the DS1314 can supply to the memories in the
battery-backup mode.
8. Measured with a load as shown in Figure 2.
9. Chip Enable Output ( CEO ) can only sustain leakage current in the battery-backup mode.
10. CEO will be held high for a time equal to tREC after VCCI crosses VCCTP on power-up.
11. BW and RST are open drain outputs and as such cannot source current. External pull-up resistors
should be connected to these pins for proper operation. Both BW and RST can sink 10 mA.
12. tCE maximum must be met to ensure data integrity on power-down.
13. In battery-backup mode, inputs must never be below ground or above VCCO.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: See below
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
OUTPUT LOAD Figure 2
* INCLUDING SCOPE AND JIG CAPACITANCE
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| DS1314_05 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3V Nonvolatile Controller with Lithium Battery Monitor |
| DS1314+ | 功能描述:IC CTRLR NV W/BATT MON 8-DIP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
| DS1314E | 功能描述:IC CTRL NV W/BATT MON 3V 20TSSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
| DS1314E/T&R | 制造商:Maxim Integrated Products 功能描述:NV CONTRL 3V BW&RST 20-TSSOP T&R - Tape and Reel 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述:IC CTRL NV W/BATT MON 3V 20TSSOP |
| DS1314E/T&R | 功能描述:IC CTRL NV W/BATT MON 3V 20TSSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
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