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參數資料
| 型號： | DS1330AB |
| 英文描述： | 256k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 256k非易失SRAM，帶有電池監(jiān)控器 |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 191K |
| 代理商： | DS1330AB |
DS1330Y/AB
3 of 11
PACKAGES
The 34-pin PowerCap module integrates SRAM memory and NV control along with contacts for
connection to the lithium battery in the DS9034PC PowerCap. The PowerCap module package design
allows a DS1330 PCM device to be surface mounted without subjecting its lithium backup battery to
destructive high-temperature reflow soldering. After a DS1330 PCM is reflow soldered, a DS9034PC is
snapped on top of the PCM to form a complete NV SRAM module. The DS9034PC is keyed to prevent
improper attachment. DS1330 PowerCap modules and DS9034PC PowerCaps are ordered separately and
shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
PARAMETER
SYMBOL
DS1330AB Power Supply Voltage
V
CC
DS1330Y Power Supply Voltage
V
CC
Logic 1
V
IH
Logic 0
V
IL
MIN
4.75
4.5
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
0.8
UNITS
V
V
V
V
NOTES
DC ELECTRICAL
(V
CC
= 5V 5% for DS1330AB)
CHARACTERISTICS
(t
A
: See Note 10) (V
CC
= 5V 10% for DS1330Y)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
I
IO
Output Current @ 2.2V
I
OH
Output Current @ 0.4V
I
OL
Standby Current
CE
=2.2V
I
CCS1
I
CCS2
Operating Current
I
CCO1
Write Protection Voltage (DS1330AB)
V
TP
Write Protection Voltage (DS1330Y)
V
TP
MIN
-1.0
-1.0
TYP
MAX
+1.0
+1.0
UNITS
A
A
mA
mA
A
NOTES
I/O Leakage Current
CE
V
IH
V
CC
-1.0
2.0
14
14
200
600
Standby Current
CE
=V
CC
-0.5V
50
150
A
85
4.75
4.5
mA
V
V
4.50
4.25
4.62
4.37
相關PDF資料 |
PDF描述 |
|---|---|
| DS1330YP-100-IND | Isolation Transformer |
| DS1330ABP-100 | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330ABP-100-IND | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330ABP-70 | 256k Nonvolatile SRAM with Battery Monitor |
| DS1330ABP-70-IND | 256k Nonvolatile SRAM with Battery Monitor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DS1330ABL-100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABL-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABL-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABL-70-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABP-100 | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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