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參數(shù)資料
| 型號： | DS1350AB-70 |
| 元件分類： | DRAM |
| 英文描述： | 4096k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 4096k非易失SRAM與電池監(jiān)視器 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 228K |
| 代理商： | DS1350AB-70 |
DS1350Y/AB
4 of 12
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
DS1350AB Power Supply Voltage
V
CC
DS1350Y Power Supply Voltage
V
CC
Logic 1
V
IH
Logic 0
V
IL
MIN
4.75
4.5
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
0.8
UNITS
V
V
V
V
NOTES
DC ELECTRICAL
(V
CC
=5V
±
=
5% for DS1350AB)
CHARACTERISTICS
(t
A
: See Note 10) (V
CC
=5V
±
=
10% for DS1350Y)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
I/O Leakage Current
CE
≥
V
IH
≤
V
CC
I
IO
Output Current @ 2.4V
I
OH
Output Current @ 0.4V
I
OL
Standby Current
CE
=2.2V
I
CCS1
Standby Current
CE
=V
CC
-0.5V
I
CCS2
Operating Current
I
CCO1
Write Protection Voltage (DS1350AB)
V
TP
Write Protection Voltage (DS1350Y)
V
TP
MIN
-1.0
-1.0
-1.0
2.0
TYP
MAX
+1.0
+1.0
UNITS
μ
A
μ
A
mA
mA
μ
A
μ
A
mA
V
V
NOTES
14
14
200
50
600
150
85
4.75
4.5
4.50
4.25
4.62
4.37
CAPACITANCE
(t
A
=25
°
C)
PARAMETER
SYMBOL
Input Capacitance
C
IN
Input/Output Capacitance
C
I/O
MIN
TYP
5
5
MAX
10
10
UNITS
pF
pF
NOTES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1350Y | 4096k Nonvolatile SRAM with Battery Monitor |
| DS1350BL-100-IND | NVRAM (Battery Based) |
| DS1350BL-70 | NVRAM (Battery Based) |
| DS1350BL-70-IND | NVRAM (Battery Based) |
| DS1350WP-150 | NVRAM (Battery Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1350ABL-100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1350ABL-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1350ABL-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1350ABL-70-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1350ABP-100 | 功能描述:NVRAM 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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