DS1558
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DC ELECTRICAL CHARACTERISTICS
(VCC = +3.3V ±10% or +5V ±10%, T = -40°C to +85°C.)
NOTES
A
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Active Suppl
mA
2, 3
y Current, +5V
ICC
6
25
Active Suppl
mA
2, 3
y Current, +3.3V
ICC
4
15
TTL Standby, +5V ( CE = VIH)
ICC1
3
6
mA
2, 3
TTL Standby, +3.3V ( CE = VIH)
ICC1
2
6
mA
2, 3
CMOS Standb
(
y Current, +5V
CE
VCC
mA
2, 3
- 0.2V)
ICC2
2
6
CMOS Standby Current, +3.3V
( CE
V - 0.2V)
CC
ICC2
1
2
mA
2, 3
Input Leakage Current
(Any Input)
IIL
-1
+1
A
Output Leakage Current
(Any Output)
IOL
-1
+1
A
Output Logic 1 Voltage
(IOUT = -1.0mA)
VOH
2.4
V
1
IOUT = 2.1mA,
DQ0–DQ7 Outputs
VOL1
0.4
V
1
Output Logic 0
Voltage
IOUT = 7.0mA,
IRQ
/FT and RST
Outputs
VOL2
0.4
V
1, 5
Write Protection Voltage, +5V
VPF
4.20
4.37
4.50
V
1
Write Protection Voltage, +3.3V
V
2.75
2.88
2.97
PF
V
1
Battery Switchover Voltage, +5V
VSO
VBAT
V
1
Battery Switchover Voltage, +3.3V
VSO
VPF
V
1, 4
Battery Curre
0.3
0.5
μA
6,7
nt OSC On
IOSC
Battery Current OSC Off
IBACKUP
100
nA
7
Output Voltage ICCO = 70mA, +5V
VCC01
VCC1 -
0.3
V
Output Voltage ICCO = 40mA, +3.3V
VCC01
VCC1 -
0.3
V
Output Voltage ICCO = 10μA
VCC02
VBAT -
0.2
VBAT -
0.031
V
10
CRYSTAL SPECIFICATIONS
*
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Nominal Frequency
fO
32.768
kHz
Series Resistance
ESR
45
k
Load Capacitance
CL
6
pF
*The crystal, traces, and crystal input pins should be isolated from RF generating signals. Refer to Application Note 58: Crystal Considerations
for Dallas Real-Time Clocks for additional specifications.