參數(shù)資料
型號: DS1685EN-5/T&R
廠商: Maxim Integrated Products
文件頁數(shù): 26/34頁
文件大?。?/td> 0K
描述: IC RTC 5V 64BIT Y2K IND 24TSSOP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 1,000
類型: 時鐘/日歷
特點(diǎn): 警報器,NVSRAM,方波輸出,Y2K
存儲容量: 242B
時間格式: HH:MM:SS(12/24 小時)
數(shù)據(jù)格式: YY-MM-DD-dd
接口: 并聯(lián)
電源電壓: 4.5 V ~ 5.5 V
電壓 - 電源,電池: 2.5 V ~ 3.7 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 24-TSSOP
包裝: 帶卷 (TR)
DS1685/DS1687 3V/5V Real-Time Clocks
32 of 34
WAKE-UP/KICKSTART TIMING
Note 1:
All voltages are referenced to ground.
Note 2:
Typical values are at +25°C and nominal supplies.
Note 3:
Outputs are open.
Note 4:
Applies to the AD0–AD7 pins and the SQW pin when each is in a high-impedance state.
Note 5:
The IRQ and PWR pins are open-drain outputs.
Note 6:
Measured with a load of 50pF + 1 TTL gate.
Note 7:
Wake-up kickstart timeout generated only when the oscillator is enabled and the countdown chain is not reset.
Note 8:
VSW is determined by the larger of VBAT and VBAUX.
Note 9:
The DS1687 keeps time to an accuracy of ±1 minute per month at 25°C during data retention time for the period of tDR.
Note 10: tDR is the amount of time that the internal battery can power the internal oscillator and internal registers of the DS1687
at 25°C.
Note 11: RTC Encapsulate DIP modules can be successfully processed through conventional wave-soldering techniques as
long as temperature exposure to the lithium energy source contained within does not exceed +85°C. Post solder
cleaning with water washing techniques is acceptable, if ultrasonic vibration is not used.
Note 12: IBAT1 and IBAT2 are measured at VBAT or VBAUX = 3.5V and with recommended crystal type on X1 and X2.
*THIS CONDITION CAN OCCUR WITH THE 3V DEVICE.
NOTE: TIME INTERVALS SHOWN ABOVE ARE REFERENCED IN WAKE-UP/KICKSTART SECTION.
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