參數(shù)資料
型號(hào): DS1847E-050+
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 13/17頁(yè)
文件大?。?/td> 0K
描述: IC RES TEMP-CNTRL 50/10K 16TSSOP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 96
接片: 256
電阻(歐姆): 10k,50k
電路數(shù): 2
溫度系數(shù): 標(biāo)準(zhǔn)值 850 ppm/°C
存儲(chǔ)器類型: 非易失
接口: I²C(設(shè)備位址)
電源電壓: 3 V ~ 5.5 V
工作溫度: -40°C ~ 95°C
安裝類型: 表面貼裝
封裝/外殼: 16-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 16-TSSOP
包裝: 管件
DS1847
5 of 17
Memory
Location
Name of Location
Function of Location
E2h
Temperature MSB
This byte contains the MSB of the 13-bit 2s
complement temperature output from the
temperature sensor.
E3h
Temperature LSB
This byte contains the LSB of the 13-bit 2s
complement temperature output from the
temperature sensor.
For example temperature readings, refer to Table
2.
E4h
Address Pointer
Calculated, current resistor address (0h – 47h).
The user-defined resistor setting at this location in
the respective look-up table will be loaded into
F0h and F1h to set the two resistors.
E5h to E6h
User Memory
General purpose user memory (SRAM)
E7h
Address Select
Internal or external device address select. This
byte allows the user to use the external address
pins or an internal register location to determine
the device address.
ENB = 0 and external A2, A1, A0 grounded,
device will use internal address bits (A2, A1, A0)
in this register
ENB = 1, external A2, A1, A0 = any setting,
device will use external address pins
Default setting is 01h. The device uses external
pins to determine its address.
E8h to EFh
User Memory
General purpose user memory (SRAM)
F0h
Resistor 0 Setting
In the user-controlled setting mode, this block
contains the resistor 0 setting.
F1h
Resistor 1 Setting
In the user-controlled setting mode, this block
contains the resistor 1 setting.
F2h to FFh
User memory
General purpose user memory (SRAM)
A2 A1 A0 ENB
20 2-1 2-2 2-3 2-4 X X X
S 27 26 25 24 23 22 21
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