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參數(shù)資料
| 型號： | DS1855E-010+ |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 16/21頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC RES TEMP-CNTRL 10/10K 14TSSOP |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 96 |
| 接片： | 100，256 |
| 電阻（歐姆）： | 10k，100k |
| 電路數(shù)： | 2 |
| 溫度系數(shù)： | 標(biāo)準(zhǔn)值 750 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | I²C（設(shè)備位址） |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 14-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 14-TSSOP |
| 包裝： | 管件 |
DS1855
4 of 21
MEMORY ORGANIZATION
The DS1855’s serial EEPROM is internally organized with 256 words of 1 byte each. Each word requires
an 8-bit address for random word addressing. The byte at address F9h determines the wiper setting for
potentiometer 0, which contains 100 positions. Writing values above 63h to this address sets the wiper to
its uppermost position, but the MSB is ignored. The byte at address F8h determines the wiper setting for
potentiometer 1, which contains 256 positions (00h to FFh). Address locations FAh though FFh are
reserved and should not be written.
MEMORY
LOCATION
NAME OF
MEMORY
LOCATION
FUNCTION OF MEMORY LOCATION
00h – F7h
User Memory
General-purpose user memory.
F8h
Potentiometer 1 Setting Writing to this byte controls the setting of potentiometer 1, a 256-
position pot. Valid settings are 00h to FFh.
F9h
Potentiometer 0 Setting Writing to this byte controls the setting of potentiometer 0, a 100-
position pot. Valid settings are 00h to 63h. MSB is ignored.
FAh
Software Lock
Configuration Byte
The three lower bits in this byte can be used to set write-protection
to the 256-byte memory block.
B2: Writing this bit to a 1 protects the upper page of memory. If
this bit is set, memory locations F8h to FFh are configured for
write-protection.
B1: Writing this bit to a 1 protects the upper block of memory. If
this bit is set, memory locations 80h to F7h are configured for
write-protection. The upper page must be unlocked in order to
modify the locking of this portion of memory.
B0: Writing this bit to a 1 protects the lower block of memory. If
this bit is set, memory locations 00h to 7Fh are configured for
write-protection. The upper page must be unlocked in order to
modify the locking of this portion of memory.
B2 B1 B0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1855E-010/R | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-010/T | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-010/T&R | 制造商:Maxim Integrated Products 功能描述:DUAL NV POT & MEM TSSOP T&R 10/10K - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC RES TEMP-CNTRL 10/10K 14TSSOP |
| DS1855E-010/T&R | 功能描述:數(shù)字電位計 IC RoHS:否 制造商:Maxim Integrated 電阻:200 Ohms 溫度系數(shù):35 PPM / C 容差:25 % POT 數(shù)量:Dual 每 POT 分接頭:256 弧刷存儲器:Volatile 緩沖刷: 數(shù)字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作電源電壓:1.7 V to 5.5 V 電源電流:27 uA 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFN-16 封裝:Reel |
| DS1855E-010+ | 功能描述:數(shù)字電位計 IC Dual NV w/Memory RoHS:否 制造商:Maxim Integrated 電阻:200 Ohms 溫度系數(shù):35 PPM / C 容差:25 % POT 數(shù)量:Dual 每 POT 分接頭:256 弧刷存儲器:Volatile 緩沖刷: 數(shù)字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作電源電壓:1.7 V to 5.5 V 電源電流:27 uA 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFN-16 封裝:Reel |
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