參數(shù)資料
型號(hào): DS2506S
英文描述: Bus Bar; For Use With:CB9100 Thermal Magnetic Circuit-Breakers, 3-Pole
中文描述: 64千比特只添加存儲(chǔ)器
文件頁(yè)數(shù): 25/25頁(yè)
文件大?。?/td> 558K
代理商: DS2506S
DS2506
25 of 25
AC ELECTRICAL CHARACTERISTICS OVERDRIVE SPEED
(V
PUP
=2.8V to 6.0V; -40°C to 70°C)
TYP
MAX
16
2
16
2
1.5
4
1
PARAMETER
Time Slot
Write 1 Low Time
Write 0 Low Time
Read Data Valid
Release Time
Read Data Setup
Recovery Time
Reset Time High
Reset Time Low
Presence Detect High
Presence Detect Low
SYMBOL
t
SLOT
t
LOW1
t
LOW0
t
RDV
t
RELEASE
t
SU
t
REC
t
RSTH
t
RSTL
t
PDHIGH
t
PDLOW
MIN
6
1
6
UNITS
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
NOTES
12
0
5
1
48
48
2
8
4
80
6
24
NOTES:
1.
All voltages are referenced to ground.
2.
V
PUP
= external pullup voltage.
3.
Input load is to ground.
4.
An additional reset or communication sequence cannot begin until the reset high time has expired.
5.
Read data setup time refers to the time the host must pull the 1-Wire bus low to read a bit. Data is
guaranteed to be valid within 1 μs of this falling edge.
6.
V
IH
is a function of the external pullup resistor and V
PUP
.
7.
30 nanocoulombs per 72 time slots @ 5.0V.
8.
At V
CC
=5.0V with a 5 k
pullup to V
CC
and a maximum time slot of 120 μs.
9.
Capacitance on the data pin could be 800 pF when power is first applied. If a 5 k
resistor is used to
pullup the data line to V
CC
, 5 μs after power has been applied the parasite capacitance will not affect
normal communications.
10.
Under certain low voltage conditions V
ILMAX
may have to be reduced to as much as 0.5V to always
guarantee a presence pulse.
11.
Operational temperature range for memory programming is -40
°
C to +50
°
C.
12.
For read-data time slots the optimal sampling point for the master is as close as possible to the end
time of the t
RDV
period without exceeding 15 μs for regular speed or 2 μs for overdrive speed. For the
case of a read-one time slot, this maximizes the amount of time for the pull-up resistor to recover the
line to a high level. For a read-zero time slot it ensures that a read will occur before the fastest 1-Wire
device releases the line (t
RELEASE
= 0).
相關(guān)PDF資料
PDF描述
DS2506-UNW-PPPP UniqueWare Add-Only Memory
DS2506S-UNW UniqueWare Add-Only Memory
DS2506S-UNW-PPPP UniqueWare Add-Only Memory
DS26F31CM Line Driver
DS26F32CM Line Receiver
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DS2506-UNW-PPPP 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:UniqueWare Add-Only Memory