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參數(shù)資料
| 型號(hào)： | DS4520E+TRL |
| 廠商： | Maxim Integrated Products |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 0K |
| 描述： | IC I/O EXPANDER I2C 9B 16TSSOP |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 接口： | I²C |
| 輸入/輸出數(shù)： | 9 |
| 中斷輸出： | 無(wú) |
| 頻率 - 時(shí)鐘： | 400kHz |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 16-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-TSSOP |
| 包裝： | 帶卷 (TR) |
| 包括： | EEPROM |
DS4520
9-Bit I2C Nonvolatile
I/O Expander Plus Memory
_____________________________________________________________________
3
Note 1: All voltages referenced to ground.
Note 2: ISTBY is specified with SDA = SCL = VCC, outputs floating, and inputs connected to VCC or GND.
Note 3: The DS4520 does not obstruct the SDA and SCL lines if VCC is switched off as long as the voltages applied to these inputs
do not violate their minimum and maximum input voltage levels.
Note 4: Guaranteed by design.
Note 5: Timing shown is for fast-mode (400kHz) operation. This device is also backward compatible with I
2C standard-mode timing.
Note 6: CB—total capacitance of one bus line in picofarads.
Note 7: EEPROM write time applies to all the EEPROM memory and SRAM shadowed EEPROM memory when SEE = 0. The EEPROM
write time begins after a stop condition occurs.
AC ELECTRICAL CHARACTERISTICS (See Figure 2)
(VCC = +2.7V to +5.5V; TA = -40°C to +85°C, unless otherwise noted. Timing referenced to VIL(MAX) and VIH(MIN).)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SCL Clock Frequency
fSCL
(Note 5)
0
400
kHz
Bus Free Time Between Stop and
Start Conditions
tBUF
1.3
s
Hold Time (Repeated) Start
Condition
tHD:STA
0.6
s
Low Period of SCL
tLOW
1.3
s
High Period of SCL
tHIGH
0.6
s
Data Hold Time
tHD:DAT
0
0.9
s
Data Setup Time
tSU:DAT
100
ns
Start Setup time
tSU:STA
0.6
s
SDA and SCL Rise Time
tR
(Note 6)
20 + 0.1CB
300
ns
SDA and SCL Fall Time
tF
(Note 6)
20 + 0.1CB
300
ns
Stop Setup Time
tSU:STO
0.6
s
SDA and SCL Capacitive Loading
CB
(Note 6)
400
pF
EEPROM Write Time
tWR
(Note 7)
10
20
ms
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = +2.7V to +5.5V, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Writes
+70°C (Note 4)
50,000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS4520E-W | 功能描述:接口-I/O擴(kuò)展器 9-Bit I2C NV I/O Expander Plus Memory RoHS:否 制造商:NXP Semiconductors 邏輯系列: 輸入/輸出端數(shù)量: 最大工作頻率:100 kHz 工作電源電壓:1.65 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HVQFN-16 封裝:Reel |
| DS4520F+TRL | 制造商:Maxim Integrated Products 功能描述: |
| DS4520MRAB0 | 制造商:Thomas & Betts 功能描述:600A,NLT,4P5W,MG,520,AB0,3PY120/208 |
| DS4521FP000 | 制造商:Thomas & Betts 功能描述:400A,CON,4P5W,MG,521,3PY250V |
| DS4521MP000 | 制造商:Thomas & Betts 功能描述:400A,PLG,4P5W,MG,521,3PY250V |
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