參數(shù)資料
型號(hào): DS75325
廠商: National Semiconductor Corporation
英文描述: Memory Drivers
中文描述: 記憶驅(qū)動(dòng)
文件頁數(shù): 5/14頁
文件大?。?/td> 201K
代理商: DS75325
Applications
EXTERNAL RESISTOR CALCULATION
A typical magnetic-memory word drive requirement is shown
in
Figure 11 A source-output transistor of one DS75325
delivers load current (IL) The sink-output transistor of an-
other DS75325 sinks this current
The value of the external pull-up resistor (Rext) for a particu-
lar memory application may be determined using the follow-
ing equation
Rext e
16 VCC2(Min) b VS b 22
IL b16 VCC2(Min) b VS b 29
(1)
where Rext is in kX
VCC2(Min) is the lowest expected value of VCC2 in volts VS
is the source output voltage in volts with respect to ground
IL is in mA
The power dissipated in resistor Rext during the load current
pulse duration is calculated using Equation 2
PRext
IL
16
VCC2(Min) b VS b 2
(2)
where PRext is in mW
After solving for Rext the magnitude of the source collector
current (ICS) is determined from Equation 3
(3)
ICS
094 IL
where ICS is in mA
As an example let VCC2(Min) e 20V and VL e 3V while IL
of 500 mA flows Using Equation 1
Rext e
16 (20 b 3 b 22)
500 b 16 (20 b 3 b 29)
e
05 kX
and from Equation 2
PRext
500
16
20 b 3 b 2
470 mW
The amount of the memory system current source (ICS)
from Equation 3 is
ICS
094 (500)
470 mA
In this example the regulated source-output transistor base
current through the external pull-up resistor (Rext) and the
source gate is approximately 30 mA This current and ICS
comprise IL
TLF9755 – 15
Note 1
For clarity partial logic diagrams of two DS55325s are shown
Note 2
Source and sink shown are in different packages
FIGURE 11 Typical Application Data
13
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