參數(shù)資料
型號: DS9-12F
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: Rectifier Diode Avalanche Diode
中文描述: 11 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA
封裝: DO-4, 1 PIN
文件頁數(shù): 2/2頁
文件大小: 46K
代理商: DS9-12F
2000 IXYS All rights reserved
2 - 2
10
-3
10
-2
10
-1
10
0
t
10
1
0
50
100
150
200
250
300
2
3
4
5 6 7 ms
t
1
10
200
400
600
A
2
s
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
10
20
30
40
50
0
5
10
15
20
0
0
5
10
15
20
25
50
100
150
200
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t
10
4
0
1
2
3
4
5
I
2
t
I
FSM
A
I
F
A
V
s
P
F
W
I
F(AV)M
A
T
amb
°C
s
Z
thJH
K/W
0
50
100
150
200
250
0
5
10
15
20
25
I
F(AV)M
T
c
A
°C
V
DS
DSA 9
9
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
FSM
: crest value, t: duration
Fig. 3 I
2
t
versus time (1-10 ms)
R
thJH
for various conduction angles d:
d
R
thJH
(K/W)
3.0
3.35
3.56
4.0
4.64
DC
180
120
60
30
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
0.095
0.515
1.39
1.0
t
i
(s)
0.00032
0.0102
0.360
2.30
1
2
3
4
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature
typ. lim.
T
VJ
= 180°C
T
VJ
= 25°C
50Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 180°C
V
R
= 0 V
T
VJ
=45°C
T
VJ
=180°C
DC
d = 180° sin
d =
120°
d =
d =
60°
30°
30°
60°
120°
180°
DC
R
thJA
:
8.3 K/W
13 K/W
(CU80x80)
18 K/W
DC
180° sin
120°
60°
30°
ase
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