![](http://datasheet.mmic.net.cn/330000/DS75-08B_datasheet_16390654/DS75-08B_1.png)
2000 IXYS All rights reserved
1 - 2
V
RSM
V
900
1300
1300
1700
1900
V
(BR)min
x
V
RRM
V
-
-
1300
1760
1950
Anode
on stud
Cathode
on stud
DSI
75-08B
DSI
75-12B
DSAI
75-12B
DSAI
75-16B
DSAI
75-18B
V
800
1200
1200
1600
1800
DS
75-08B
DS
75-12B
DSA
75-12B
DSA
75-16B
DSA
75-18B
x
Only for Avalanche Diodes
Symbol
Test Conditions
Maximum Ratings
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
T
VJ
T
case
= 100 C; 180 sine
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10 s
T
VJ
= 45 C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
= T
160
110
A
A
20
kW
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1400
1500
1250
1310
A
A
A
A
I
2
t
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9800
9450
7820
7210
A
2
s
A
2
s
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
M
d
-40...+180
C
C
C
180
-40...+180
Mounting torque
2.4-4.5
21-40
Nm
lb.in.
g
Weight
21
V
RRM
= 800-1800 V
I
F(RMS)
= 160 A
I
F(AV)M
= 110 A
Features
G
International standard package,
JEDEC DO-203 AB (DO-5)
G
Planar glassivated chips
Applications
G
High power rectifiers
G
Field supply for DC motors
G
Power supplies
Advantages
G
Space and weight savings
G
Simple mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
Symbol
Test Conditions
Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
T
VJ
I
F
For power-loss calculations only
T
VJ
= T
VJM
DC current
DC current
= T
VJM
; V
R
= V
RRM
= 150 A; T
VJ
= 25 C
6
mA
1.17
V
0.75
V
2
m
0.5
0.9
K/W
K/W
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
4.05
3.9
100
mm
mm
m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS
DSA 75
75
DSI
DSAI 75
75
744
Rectifier Diode
Avalanche Diode
A = Anode C = Cathode
DO-203 AB
1/4-28UNF
DS
DSA
DSI
DSAI
C
A
A
C