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參數(shù)資料
| 型號： | DSEC60-04A |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HiPerFREDTM Epitaxial Diode with common cathode and soft recovery |
| 中文描述： | 30 A, 400 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | DSEC60-04A |
2000 IXYS All rights reserved
1 - 2
Features
G
International standard package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low
EMI/RFI
G
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
A
A C A
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
V
RRM
= 400 V
t
rr
= 30 ns
= 2x 30 A
DSEC 60-04A
V
RSM
V
V
RRM
V
Type
400
400
DSEC 60-04A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
70
30
A
A
T
C
= 140°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= tbd A; L = tbd μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
tbd
A
tbd
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
tbd
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
mounting torque
165
W
0.8...1.2
Nm
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 30 A;
V
R
= V
RRM
250
A
1
mA
V
F
y
T
VJ
= 150°C
T
VJ
= 25°C
1.09
1.49
V
V
R
thJC
R
thCH
t
rr
0.9
K/W
K/W
0.25
I
F
= 1 A; -di/dt = 300 A/ s;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/ s
T
VJ
= 100°C
30
ns
I
RM
5.5
6.8
A
Preliminary Data
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