參數(shù)資料
型號(hào)： DSEI1212
廠商： IXYS Corporation
英文描述： Fast Recovery Epitaxial Diode (FRED)
中文描述： 快速恢復(fù)外延二極管（弗雷德）
文件頁數(shù)： 1/2頁
文件大?。?/td> 53K
代理商： DSEI1212
2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
1200
1200
DSEI 12-12A
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FRM
T
VJ
= T
T
C
= 100 C; rectangular, d = 0.5
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
25
11
150
A
A
A
I
FSM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
75
80
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
65
70
A
A
I
2
t
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
28
27
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
21
20
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
150
-40...+150
P
tot
T
C
= 25 C
78
W
M
d
Mounting torque
0.4...0.6
Nm
Weight
2
g
Symbol
Test Conditions
Characteristic Values
max.
typ.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
250
150
A
A
4
mA
V
F
I
F
= 12 A;
T
VJ
=150 C
T
VJ
= 25 C
2.2
2.6
V
V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.65
46.2
V
m
R
thJC
R
thCK
R
thJA
1.6
K/W
K/W
K/W
0.5
60
t
rr
I
F
= 1 A; -di/dt = 50 A/ s; V
R
= 30 V; T
VJ
= 25 C
50
70
ns
I
RM
V
= 540 V;
L 0.05 H; T
VJ
= 100 C
I
F
= 12 A; -di
F
/dt = 100 A/ s
6.5
7.2
A
DSEI 12
I
FAVM
= 11 A
V
RRM
= 1200 V
t
rr
= 50 ns
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
G
International standard package
JEDEC TO-220 AC
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Applications
G
Antiparallel diode for high frequency
switching devices
G
Anti saturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating and melting
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
High reliability circuit operation
G
Low voltage peaks for reduced
protection circuits
G
Low noise switching
G
Low losses
G
Operating at lower temperature or
space saving by reduced cooling
Fast Recovery
Epitaxial Diode (FRED)
A
C
A = Anode, C = Cathode
TO-220 AC
C
C
A
相關(guān)PDF資料
PDF描述
DSEI120-06A Fast Recovery Epitaxial Diode (FRED)
DSEI120-12A Fast Recovery Epitaxial Diode (FRED)
DSEI120 Fast Recovery Epitaxial Diode (FRED)(正向電流109A的快速恢復(fù)外延型二極管)
DSEI19 Fast Recovery Epitaxial Diode (FRED)(正向電流20A的快速恢復(fù)外延型二極管)
DSEI19-06 Fast Recovery Epitaxial Diode (FRED)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DSEI12-12A 功能描述:整流器 1200V 11A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEI12-12A 制造商:IXYS Corporation 功能描述:DIODE FAST RECOVERY 11A
DSEI19-06 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED)
DSEI19-06AS 功能描述:二極管 - 通用，功率，開關(guān) 19 Amps 600V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
DSEI19-06AS-TUB 功能描述:肖特基二極管與整流器 Fast Recovery Exitaxil Diode FRED RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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