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參數(shù)資料
| 型號： | DSEI19-06AS |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Recovery Epitaxial Diode (FRED) |
| 中文描述： | 20 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AA |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 27K |
| 代理商： | DSEI19-06AS |
2000 IXYS All rights reserved
1 - 1
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
V
RSM
V
RRM
Type
V
V
600
600
DSEI 19-06AS
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FRM
T
VJ
= T
T
C
= 65 C; rectangular, d = 0.5
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
25
20
150
A
A
A
I
FSM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
100
110
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
95
A
A
I
2
t
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
50
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
36
37
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
150
-40...+150
P
tot
T
C
= 25 C
61
W
Weight
2
g
Symbol
Test Conditions
Characteristic Values
max.
typ.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
50
25
A
A
3
mA
V
F
I
F
= 16 A;
T
VJ
=150 C
T
VJ
= 25 C
1.5
1.7
V
V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.12
23.2
V
m
R
thJC
2
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/ s; V
R
= 30 V; T
VJ
= 25 C
35
50
ns
I
RM
V
= 350 V;
L 0.05 H; T
VJ
= 100 C
I
F
= 12 A; -di
F
/dt = 100 A/ s
4
4.4
A
Characteristic curves are located in the data sheet DSEI 12-06
DSEI 19
V
RRM
= 600 V
I
FAVM
= 20 A
t
rr
= 35 ns
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 AA Outline
Features
G
International standard surface mount
package JEDEC TO-263 AA
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Fast Recovery
Epitaxial Diode (FRED)
A
C
TO-263 AA
A
=
Anode,
C
=
Cathode,
NC = No connection, TAB = Cathode
NC
A
C (TAB)
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| DSEI20 | Fast Recovery Epitaxial Diode (FRED)(正向電流17A的快速恢復外延型二極管) |
| DSEI2X31 | Fast Recovery Epitaxial Diode (FRED) |
| DSEI2X101-02A | ARRAY OF INDEPENDENT DIODES|SOT-227B |
| DSEI2X101-06A | ARRAY OF INDEPENDENT DIODES|SOT-227B |
| DSEI2X121 | Fast Recovery Epitaxial Diode (FRED) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DSEI19-06AS-TUB | 功能描述:肖特基二極管與整流器 Fast Recovery Exitaxil Diode FRED RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| DSEI20 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED) |
| DSEI20-12A | 功能描述:整流器 1200V 17A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEI2X101 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED) |
| DSEI2X101-02A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ARRAY OF INDEPENDENT DIODES|SOT-227B |
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