參數(shù)資料
型號: DSEP15-06B
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: HiPerFREDTM Epitaxial Diode with soft recovery
中文描述: 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/1頁
文件大?。?/td> 338K
代理商: DSEP15-06B
D4
2001 IXYS All rights reserved
1 - 1
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
G
International standard package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low
EMI/RFI
G
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
μ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 15-06B
I
FAV
V
RRM
= 600 V
t
rr
= 25 ns
= 15 A
V
RSM
V
V
RRM
V
Type
600
600
DSEP 15-06B
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
35
15
A
A
T
C
= 130°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
110
A
T
= 25°C; non-repetitive; I
AS
= 1 A;
L = 100 μH
L = 20 mH
0.1
20
mJ
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.1
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
95
W
mounting torque
0.4...0.6
Nm
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
V
R
= V
RRM
100
0.5
μ
A
mA
V
F
y
I
F
= 15 A;
T
VJ
= 150°C
T
VJ
= 25°C
1.55
2.52
V
V
R
thJC
R
thCH
t
rr
1.6
K/W
K/W
0.5
I
F
= 1 A; -di/dt = 100 A/
μ
s;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/
μ
s
T
VJ
= 100°C
25
30
ns
I
RM
2.6
A
1
Preliminary data
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