參數(shù)資料
型號： DSM2180F3V15K6
廠商： 意法半導體
元件分類： 數(shù)字信號處理
英文描述： DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply)
中文描述： 帝斯曼（數(shù)字信號處理器系統(tǒng)內(nèi)存）模擬器件公司的ADSP - 218X系列（5V電源）
文件頁數(shù)： 20/63頁
文件大小： 809K
代理商： DSM2180F3V15K6
DSM2180F3
20/63
Instruction Sequences
An instruction sequence consists of a sequence of
specific write or read operations. Each byte written
to the device is received and sequentially decoded
and not executed as a standard write operation to
the memory array. The instruction sequence is ex-
ecuted when the correct number of bytes are prop-
erly received and the time between two
consecutive bytes is shorter than the time-out pe-
riod. Some instruction sequences are structured to
include read operations after the initial write oper-
ations.
The instruction sequence must be followed exact-
ly. Any invalid combination of instruction bytes or
time-out between two consecutive bytes while ad-
dressing Flash memory resets the device logic into
Read Array mode (Flash memory is read like a
ROM device). The device supports the instruction
sequences summarized in Table 5:
Flash memory:
I
Erase memory by chip or sector
I
Suspend or resume sector erase
I
Program a Byte
I
Reset to Read Array mode
I
Read primary Flash Identifier value
I
Read Sector Protection Status
These instruction sequences are detailed in Table
5. For efficient decoding of the instruction se-
quences, the first two bytes of an instruction se-
quence are the coded cycles and are followed by
an instruction byte or confirmation byte. The coded
cycles consist of writing the data AAh to address
XX555h during the first cycle and data 55h to ad-
dress XXAAAh during the second cycle. Address
signals A17-A12 are Don’t Care during the instruc-
tion sequence Write cycles. However, the appro-
priate internal Sector Select (
FS0-FS7
) must be
selected internally (active, which is logic 1).
Reading Flash Memory
Under typical conditions, the DSP may read the
Flash memory using read operations just as it
would a ROM or RAM device. Alternately, the DSP
may use read operations to obtain status informa-
tion about a Program or Erase cycle that is cur-
rently in progress. Lastly, the DSP may use
instruction sequences to read special data from
these memory blocks. The following sections de-
scribe these read instruction sequences.
Read Memory Contents.
Flash
placed in the Read Array mode after Power-up,
chip reset, or a Reset Flash memory instruction
sequence (see Table 5). The DSP can read the
memory contents of the Flash memory by using
read operations any time the read operation is not
part of an instruction sequence.
Read Flash Identifier.
The Flash memory identi-
fier is read with an instruction sequence composed
of 4 operations: 3 specific write operations and a
read operation (see Table 5). During the read op-
eration, address bits A6, A1, and A0 must be
0,0,1, respectively, and the appropriate internal
Sector Select (
FS0-FS7
) must be active. The iden-
tifier 0xE3.
Read Memory Sector Protection Status.
The
Flash memory Sector Protection Status is read
with an instruction sequence composed of 4 oper-
ations: 3 specific write operations and a read oper-
ation (see Table 5). During the read operation,
address bits A6, A1, and A0 must be 0,1,0, re-
spectively, while internal Sector Select (FS0-FS7)
designates the Flash memory sector whose pro-
tection has to be verified. The read operation pro-
duces 01h if the Flash memory sector is protected,
or 00h if the sector is not protected.
The sector protection status can also be read by
the DSP accessing the Flash memory Protection
register in
csiop
space. See the section entitled
“Flash Memory Sector Protect” for register defini-
tions.
memory
is
Table 6. Status Bit Definition
Note: 1. X = Not guaranteed value, can be read either 1 or 0.
2. DQ7-DQ0 represent the Data Bus bits, D7-D0.
Reading the Erase/Program Status Bits.
The
device provides several status bits to be used by
the DSP to confirm the completion of an Erase or
Program cycle of Flash memory. These status bits
minimize the time that the DSP spends performing
these tasks and are defined in Table 6. The status
bits can be read as many times as needed.
For Flash memory, the DSP can perform a read
operation to obtain these status bits while an
Erase or Program instruction sequence is being
executed by the embedded algorithm. See the
Functional Block
FS0-FS7
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
Flash Memory
Active (the desired
segment is selected)
Data
Polling
Toggle
Flag
Error
Flag
X
Erase
Time-
out
X
X
X
相關PDF資料
PDF描述
DSM2180F3V15T6 DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply)
DSM2180F3V90K6 DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply)
DSM2180F3V90T6 DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply)
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相關代理商/技術參數(shù)
參數(shù)描述
DSM2180F3V-15K6 功能描述:SPLD - 簡單可編程邏輯器件 5.0V 8M 150ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
DSM2180F3V15T6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (3.3V Supply)
DSM2180F3V-15T6 功能描述:SPLD - 簡單可編程邏輯器件 5.0V 8M 150ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
DSM2180F3V90K6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (3.3V Supply)
DSM2180F3V-90K6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC
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