參數(shù)資料
型號: DSPIC30F2012T-30I/SO
廠商: Microchip Technology
文件頁數(shù): 17/66頁
文件大?。?/td> 0K
描述: IC DSPIC MCU/DSP 12K 28SOIC
產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
標(biāo)準(zhǔn)包裝: 1,600
系列: dsPIC™ 30F
核心處理器: dsPIC
芯體尺寸: 16-位
速度: 30 MIP
連通性: I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 20
程序存儲器容量: 12KB(4K x 24)
程序存儲器類型: 閃存
RAM 容量: 1K x 8
電壓 - 電源 (Vcc/Vdd): 2.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 10x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 28-SOIC(0.295",7.50mm 寬)
包裝: 帶卷 (TR)
dsPIC30F Flash Programming Specification
DS70102K-page 24
2010 Microchip Technology Inc.
TABLE 8-1:
PROGRAMMING EXECUTIVE COMMAND SET
Opcode
Mnemonic
Length
(16-bit
words)
Time Out
Description
0x0
SCHECK
1
1 ms
Sanity check.
0x1
READD
4
1 ms/row Read N 16-bit words of data EEPROM, Configuration registers or
device ID starting from specified address.
0x2
READP
4
1 ms/row Read N 24-bit instruction words of code memory starting from
specified address.
0x3
Reserved
N/A
This command is reserved. It will return a NACK.
0x4
PROGD(2)
19
5 ms
Program one row of data EEPROM at the specified address, then
verify.
0x5
PROGP(1)
51
5 ms
Program one row of code memory at the specified address, then
verify.
0x6
PROGC
4
5 ms
Write byte or 16-bit word to specified Configuration register.
0x7
ERASEB
2
5 ms
Bulk Erase (entire code memory or data EEPROM), or erase by
segment.
0x8
ERASED(2)
3
5 ms/row Erase rows of data EEPROM from specified address.
0x9
ERASEP(1)
3
5 ms/row Erase rows of code memory from specified address.
0xA
QBLANK
3
300 ms
Query if the code memory and data EEPROM are blank.
0xB
QVER
1
1 ms
Query the programming executive software version.
Note 1: One row of code memory consists of (32) 24-bit words. Refer to Table 5-2 for device-specific information.
2: One row of data EEPROM consists of (16) 16-bit words. Refer to Table 5-3 for device-specific information.
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