參數(shù)資料
型號: DSPIC33FJ32MC202-E/SO
廠商: Microchip Technology
文件頁數(shù): 51/76頁
文件大?。?/td> 0K
描述: IC DSPIC MCU/DSP 32K 28SOIC
產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
特色產(chǎn)品: PIC24FJ/33FJ MCUs & dsPIC? DSCs
標準包裝: 27
系列: dsPIC™ 33F
核心處理器: dsPIC
芯體尺寸: 16-位
速度: 40 MIP
連通性: I²C,IrDA,LIN,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,DMA,電機控制 PWM,QEI,POR,PWM,WDT
輸入/輸出數(shù): 21
程序存儲器容量: 32KB(32K x 8)
程序存儲器類型: 閃存
RAM 容量: 2K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 6x10b/12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 28-SOIC(0.295",7.50mm 寬)
包裝: 管件
產(chǎn)品目錄頁面: 652 (CN2011-ZH PDF)
配用: DV164033-ND - KIT START EXPLORER 16 MPLAB ICD2
DM240001-ND - BOARD DEMO PIC24/DSPIC33/PIC32
2007-2012 Microchip Technology Inc.
DS70283K-page 55
dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304
5.0
FLASH PROGRAM MEMORY
The dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304
devices contain internal Flash program memory for
storing and executing application code. The memory is
readable, writable and erasable during normal operation
over the entire VDD range.
Flash memory can be programmed in two ways:
In-Circuit Serial Programming (ICSP)
programming capability
Run-Time Self-Programming (RTSP)
ICSP
allows
a
dsPIC33FJ32MC202/204
and
dsPIC33FJ16MC304 device to be serially programmed
while in the end application circuit. This is done with
two lines for programming clock and programming data
(one of the alternate programming pin pairs:
PGECx/PGEDx), and three other lines for power (VDD),
ground (VSS) and Master Clear (MCLR). This allows
customers to manufacture boards with unprogrammed
devices and then program the digital signal controller
just before shipping the product. This also allows the
most recent firmware or a custom firmware to be pro-
grammed.
RTSP is accomplished using TBLRD (table read) and
TBLWT (table write) instructions. With RTSP, the user
application can write program memory data either in
blocks or ‘rows’ of 64 instructions (192 bytes) at a time
or a single program memory word, and erase program
memory in blocks or ‘pages’ of 512 instructions (1536
bytes) at a time.
5.1
Table Instructions and Flash
Programming
Regardless of the method used, all programming of
Flash memory is done with the table read and table
write instructions. These allow direct read and write
access to the program memory space from the data
memory while the device is in normal operating mode.
The 24-bit target address in the program memory is
formed using bits <7:0> of the TBLPAG register and the
Effective Address (EA) from a W register specified in
the table instruction, as shown in Figure 5-1.
The TBLRDL and the TBLWTL instructions are used to
read or write to bits <15:0> of program memory.
TBLRDL and TBLWTL can access program memory in
both Word and Byte modes.
The TBLRDH and TBLWTH instructions are used to read
or write to bits <23:16> of program memory. TBLRDH
and TBLWTH can also access program memory in Word
or Byte mode.
FIGURE 5-1:
ADDRESSING FOR TABLE REGISTERS
Note 1: This data sheet summarizes the features
of the dsPIC33FJ32MC202/204 and
dsPIC33FJ16MC304 devices. It is not
intended to be a comprehensive refer-
ence source. To complement the infor-
mation in this data sheet, refer to Section
5. “Flash Programming” (DS70191) of
the “dsPIC33F/PIC24H Family Refer-
ence Manual” which is available from the
Microchip web site (www.microchip.com)
2: Some registers and associated bits
described in this section may not be
available on all devices. Refer to
this data sheet for device-specific register
and bit information.
0
Program Counter
24 bits
Program Counter
TBLPAG Reg
8 bits
Working Reg EA
16 bits
Byte
24-bit EA
0
1/0
Select
Using
Table Instruction
Using
User/Configuration
Space Select
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