參數(shù)資料
型號(hào)： DT28F160F3B95
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
中文描述： 1M X 16 FLASH 2.7V PROM, 95 ns, PDSO56
封裝： 16 X 23.70 MM, SSOP-56
文件頁(yè)數(shù)： 9/47頁(yè)
文件大?。?/td> 277K
代理商： DT28F160F3B95
E
FAST BOOT BLOCK DATASHEET
9
PRODUCT PREVIEW
Table 1. Pin Descriptions
Sym
Type
Name and Function
V
PP
SUPPLY
BLOCK ERASE AND PROGRAM POWER SUPPLY (2.7 V
–3.6 V,
11.4 V–12.6 V):
For erasing array blocks or programming data, a valid voltage
must be applied to this pin. With V
PP
≤
V
PPLK
, memory contents cannot be altered.
Block erase and program with an invalid V
PP
voltage should not be attempted.
Applying 11.4
V
–12.6 V to V
PP
can only be done for a maximum of 1000 cycles on
main blocks and 2500 cycles on the parameter blocks.
V
PP
may be connected to
12 V for a total of 80 hours maximum (see Section 6.0 for details).
V
CC
SUPPLY
DEVICE POWER SUPPLY (2.7 V
–3.6 V):
With V
CC
≤
V
LKO
, all write attempts to
the flash memory are inhibited. Device operations at invalid V
CC
voltages should
not be attempted.
V
CCQ
SUPPLY
OUTPUT POWER SUPPLY (1.65 V–2.5 V, 2.7 V–3.6 V):
Enables all outputs to be
driven to 1.65
V to 2.5 V or 2.7 V to 3.6 V. When V
CCQ
equals 1.65 V
–2.5 V, V
CC
voltage must not exceed 3.3 V and should be regulated to 2.7 V–2.85 V to achieve
lowest power operation (see
DC Characteristics
for detailed information).
This input may be tied directly to V
CC
.
GND
SUPPLY
GROUND:
Do not float any ground pins.
NC
NO CONNECT:
Lead is not internally connected; it may be driven or floated.
2.3
Memory Blocking Organization
The Fast Boot Block flash memory family is an
asymmetrically-blocked architecture that enables
system integration of code and data within a single
flash device. For the address locations of each
block, see the memory maps in Figure 3 (top boot
blocking) and Figure 4 (bottom boot blocking).
2.3.1
PARAMETER BLOCKS
The Fast Boot Block flash memory architecture
includes parameter blocks to facilitate storage of
frequently updated small parameters that would
normally be stored in an EEPROM. By using
software techniques, the word-rewrite functionality
of EEPROMs can be emulated. Each 8- and
16-Mbit
device
contains
(4,096-words) parameter blocks.
eight
4-Kwords
2.3.2
MAIN BLOCKS
After the parameter blocks, the remainder of the
array is divided into equal size main blocks for code
and/or data storage. The 8-Mbit device contains
fifteen 32-Kword (32,768-word) main blocks, and
the 16-Mbit device contains thirty-one 32-Kword
(32,768-word) main blocks.
相關(guān)PDF資料
PDF描述
DT28F160F3T120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T95 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F800F3B120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F800F3B95 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F800F3T120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DT28F160F3T120 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T95 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160S3-100 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
DT28F160S3-120 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
DT28F160S3-130 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
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