參數(shù)資料
型號(hào): DT28F800F3B120
廠商: INTEL CORP
元件分類: DRAM
英文描述: FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
中文描述: 512K X 16 FLASH 2.7V PROM, 120 ns, PDSO56
封裝: 16 X 23.70 MM, SSOP-56
文件頁(yè)數(shù): 30/47頁(yè)
文件大?。?/td> 277K
代理商: DT28F800F3B120
FAST BOOT BLOCK DATASHEET
E
30
PRODUCT PREVIEW
8.4
DC Characteristics
—Extended Temperature
(1)
V
CC
2.7 V
–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.65 V–2.5 V
Sym
I
LI
Parameter
Input Load
Current
Note
6
Typ
Max
±
1
Typ
Max
±
1
Typ
Max
±
1
Unit
μA
Test Conditions
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
I
LO
Output Leakage
Current
6
±
10
±
10
±
10
μA
Output Leakage
Current for
WAIT#
V
CC
Standby
Current
±
25
±
25
±
25
I
CCS
6
30
50
20
50
150
250
μA
V
CC
= V
CC
Max
CE# = RP# = V
CC
or during Program/
Erase Suspend
I
CCR
V
CC
Read
Current
4,6
45
60
30
45
40
55
mA
Asynchronous
t
AVAV
= Min
V
IN
= V
IH
or V
IL
45
60
30
45
40
55
mA
Synchronous
CLK = 33 MHz
CE# = V
IL
OE# = V
IH
Burst length = 1
I
CCW
V
CC
Program
Current
V
Erase
Current
3,6
8
20
8
20
8
20
mA
V
PP
= V
PP1, 2
Program in Progress
V
PP
= V
PP1, 2
Erase in Progress
V
PP
V
CC
I
CCE
3,6
8
20
8
20
8
20
mA
I
PPR
V
Read
Current
2
±
15
2
±
15
2
±
15
μA
3
3
50
10
200
35
50
10
200
35
50
10
200
35
μA
mA
V
PP
> V
CC
V
PP
=V
PP1
Program in Progress
V
PP
= V
PP2
Program in Progress
V
PP
= V
PP1
Program in Progress
V
PP
= V
PP2
Program in Progress
V
PP
= V
PP1, 2
Program or Erase
Suspend in Progress
I
PPW
V
PP
Program
Current
2
10
2
10
2
10
mA
I
PPE
V
PP
Erase
Current
3
12
25
13
25
13
25
mA
8
25
8
25
8
25
mA
I
PPES
I
PPWS
V
Erase
Suspend Current
3
50
200
50
200
50
200
μA
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