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參數(shù)資料
| 型號： | DTC114T-AN3-6-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR |
| 中文描述： | npn型數(shù)字晶體管npn型數(shù)字晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 202K |
| 代理商： | DTC114T-AN3-6-R |
DTC114T
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-054,B
ABS OLUT E MAX IMUM RAT INGS
(Ta=25
)
℃
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
50
50
5
100
200
150
150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SOT-23/SOT-323
SOT-523
Collector Power Dissipation
P
C
Junction Temperature
Storage Temperature
Note
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIST ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
I
CBO
I
EBO
h
FE
R
IN
f
T
TEST CONDITIONS
I
C
=50
μ
A
I
C
=1mA
I
E
=50
μ
A
I
C
=10mA, I
B
=1mA
V
CB
=50V
V
EB
=4V
V
CE
=5V, I
C
=1mA
V
CE
=10V, I
E
=-5mA, f=100MHz
MIN
50
50
5
100
7
TYP
300
10
250
MAX
0.3
0.5
0.5
600
13
UNIT
V
V
V
V
μ
A
μ
A
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Input Resistance
Current Gain Bandwidth Product
k
MHz
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