參數(shù)資料
型號: DTC144T-AN3-R
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-523, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 94K
代理商: DTC144T-AN3-R
DTC144T
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-066,B
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
150
200
150
-55~+150
UNIT
V
V
V
mA
mW
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SOT-523
SOT-23/SOT-323
Collector Power Dissipation
P
C
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIST ICS
(Ta= 25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
I
C
=5mA, I
B
=0.5mA
h
FE
V
CE
=5V, I
C
=1mA
R1
f
T
V
CE
=10V, I
E
=-5mA, f=100MHz*
TEST CONDITIONS
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=50V
V
EB
=4V
MIN
50
50
5
100
32.9
TYP MAX
250
47
250
UNIT
V
V
V
μA
μA
V
k
MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device
0.5
0.5
0.3
600
61.1
相關(guān)PDF資料
PDF描述
DTC144TL-AE3-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
DTC144TL-AL3-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
DTC144TL-AN3-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
DTC1D3RKA TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23VAR
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