參數(shù)資料
型號: DTD113Z-AL3-6-R
廠商: 友順科技股份有限公司
英文描述: NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
中文描述: npn型數(shù)字晶體管(內(nèi)置偏壓電阻)
文件頁數(shù): 2/3頁
文件大?。?/td> 186K
代理商: DTD113Z-AL3-6-R
DTD113Z
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-082,C
2 of 3
ABS OLUT E MAX IMUM RAT INGS
(Ta=25°C)
PARAMETER
SYMBOL
V
CC
V
IN
I
OUT
P
C
T
J
T
STG
RATINGS
50
-5 ~ +10
500
200
+150
-55 ~ +150
UNIT
V
V
mA
mW
°C
°C
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Note
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL S PECIFICAT IONS
(Ta=25°C, unless others specified)
PARAMETER
SYMBOL
V
IN(OFF)
V
IN(ON)
V
OUT(ON)
I
OUT
/I
IN
=50mA/2.5mA
I
IN
V
IN
=5V
I
OUT(OFF)
V
CC
=50V, V
IN
=0V
h
FE
V
OUT
=5V, I
OUT
=50mA
R
1
R
2
/R
1
f
T
V
CE
=10V, I
E
=
50mA, f=100MHz
TEST CONDITIONS
MIN
1.5
82
0.7
8
TYP
0.1
1
10
200
MAX
0.3
0.3
7.2
0.5
1.3
12
UNIT
V
CC
=5V, I
OUT
=100
μ
A
V
OUT
=0.3V, I
OUT
=20mA
Input Voltage
V
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistor Ratio
Transition Frequency
Note: Transition frequency of the device
V
mA
μ
A
K
MHz
相關(guān)PDF資料
PDF描述
DTD113ZL-AE3-6-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
DTD113ZL-AL3-6-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
DTD114E-AE3-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
DTD114E-AL3-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
DTD114EL-AE3-R NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
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