參數(shù)資料
型號: DTD114E-AE3-R
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
中文描述: 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-23, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 209K
代理商: DTD114E-AE3-R
DTD114E
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-043,B
2 of 3
ABS OLUT E MAX IMUM RAT INGS
(Ta=25°C)
PARAMETER
SYMBOL
V
CC
V
IN
I
OUT
P
D
T
J
T
STG
RATING
50
-10~+40
500
200
150
-55 ~ +150
UNIT
V
V
mA
mW
°
C
°
C
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Note
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL S PECIFICAT IONS
(Ta=25°C, unless others specified)
PARAMETER
SYMBOL
V
IN(OFF)
V
CC
=5V, I
OUT
=100
μ
A
V
IN(ON)
V
OUT
=0.3V, I
OUT
=
1
0mA
V
OUT(ON)
I
OUT
/I
IN
=50mA/2.5mA
I
IN
V
IN
=5V
I
OUT(OFF)
V
CC
=50V, V
IN
=0V
h
FE
V
OUT
=5V, I
OUT
=50mA
R
1
R
2
/R
1
f
T
V
CE
=10V, I
E
=
50mA, f=100MHz
TEST CONDITIONS
MIN
3
56
7
0.8
TYP
0.1
10
1
200
MAX
0.5
0.3
0.88
0.5
13
1.2
UNIT
Input Voltage
V
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
*Transition frequency of the device
V
mA
μ
A
k
MHz
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