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參數(shù)資料
| 型號(hào)： | DTD114EL-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) |
| 中文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 209K |
| 代理商： | DTD114EL-AE3-R |
DTD114E
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-043,B
2 of 3
ABS OLUT E MAX IMUM RAT INGS
(Ta=25°C)
PARAMETER
SYMBOL
V
CC
V
IN
I
OUT
P
D
T
J
T
STG
RATING
50
-10~+40
500
200
150
-55 ~ +150
UNIT
V
V
mA
mW
°
C
°
C
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Note
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL S PECIFICAT IONS
(Ta=25°C, unless others specified)
PARAMETER
SYMBOL
V
IN(OFF)
V
CC
=5V, I
OUT
=100
μ
A
V
IN(ON)
V
OUT
=0.3V, I
OUT
=
1
0mA
V
OUT(ON)
I
OUT
/I
IN
=50mA/2.5mA
I
IN
V
IN
=5V
I
OUT(OFF)
V
CC
=50V, V
IN
=0V
h
FE
V
OUT
=5V, I
OUT
=50mA
R
1
R
2
/R
1
f
T
V
CE
=10V, I
E
=
50mA, f=100MHz
TEST CONDITIONS
MIN
3
56
7
0.8
TYP
0.1
10
1
200
MAX
0.5
0.3
0.88
0.5
13
1.2
UNIT
Input Voltage
V
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
*Transition frequency of the device
V
mA
μ
A
k
MHz
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| DTD114EL-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) |
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| DTD114EN3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:NPN Digital Transistors (Built-in Resistors) |
| DTD114ES | 制造商:ROHM 制造商全稱:Rohm 功能描述:Digital transistors (built-in resistors) |
| DTD114ES3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Mini size of Discrete semiconductor elements |
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